(PDF) 2SK2212 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK2212
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2212 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Moter Control Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test 4 3 I D = 10 A 2 5A 1 2A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) 2SK2212 Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 2 1 0.5 0.2 0.1 0.5 VGS = 10 V 15 V 12 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance vs. Temperature 1.0 VGS = 10 V Pulse Test 0.8 0.6 I D = 10 A 0.4 5 A 2A 0.2 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 10 Tc = –25 °C 5 25 °C 75 °C 2 1 0.5 0.2 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 5 Page

Páginas	Total 10 Páginas
PDF Descargar	[ Datasheet 2SK2212.PDF ]

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PDF 2SK2212 Data sheet ( Hoja de datos )