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PDF 2SK2166-01R Data sheet ( Hoja de datos )
| Número de pieza | 2SK2166-01R | |
| Descripción | N-channel MOS-FET | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SK2166-01R
FAP-IIIA Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
- Including G-S Zener-Diode
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC Converters
N-channel MOS-FET
60V 0,03Ω 40A 80W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current
V DS
V DGR
ID
60
60
40
Pulsed Drain Current
I D(puls)
160
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
P D 80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±16V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=20A
VGS=4V
ID=20A
VGS=10V
Forward Transconductance
g fs
ID=20A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
t r ID=40A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=25 Ω
I AV
L=100µH
Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
60
1,0
13
40
Typ. Max.
1,5
0,030
0,20
25
1600
580
320
15
90
300
190
2,0
500
1,0
10
0,050
0,030
2400
870
480
23
140
450
290
40
160
1,4
80
0,17
Unit
V
V
µA
mA
µA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
30 °C/W
1,56 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK2166-01R.PDF ] | |
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