(PDF) 2SK1971 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1971
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1971 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PL D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 12 50 A 8 4 20 A ID = 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 VGS = 10 V 0.6 ID = 50 A 20 A 0.4 0.2 10 A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 2SK1971 Static Drain to Source on State Resistance vs. Drain Current 5 2 Pulse Test 1 0.5 0.2 VGS = 10 V 0.1 0.05 2 5 10 20 50 100 200 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current 50 –25°C Tc = 25°C 20 10 75°C 5 2 VDS= 20 V Pulse Test 1 0.5 1 2 5 10 20 50 100 Drain Current I D (A) 5 5 Page

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PDF 2SK1971 Data sheet ( Hoja de datos )