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Número de pieza | 2SK1933 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1933 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 2SK1933
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
5A
0.4
0.2 2 A
ID = 1 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.5
Pulse Test
2 VGS = 10 V
ID = 5 A
2A
1A
1.5
1
0.5
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
2SK1933
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5
2
VGS = 10 V
1
0.5
0.2
0.1
0.5
12
5 10 20
Drain Current I D (A)
50
Forward Transfer Admittance
vs. Drain Current
50
Pulse Test
20 VDS= 20 V
10
5 Tc = 25°C
–25°C
2
75°C
1
0.5
0.1 0.2 0.5 1 2
5
Drain Current I D (A)
10
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 2SK1933.PDF ] |
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2SK1933 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
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