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PDF 2SK1860 Data sheet ( Hoja de datos )

Número de pieza 2SK1860
Descripción Silicon N-Channel Junction FET
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SK1860 Hoja de datos, Descripción, Manual

Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
0.40
+0.10
–0.05
Unit: mm
0.12
+0.02
–0.01
Features
High mutual conductance gm
Low noise voltage of NV
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage (Gate open)
Drain-gate voltage (Souse open)
VDSO
VDGO
20
20
Drain-source current (Gate open)
IDSO
2
Drain-gate current (Souse open)
IDGO
2
Gate-source cutoff current (Drain open) IGSO
2
Power dissipation
Operating ambient temperature
Storage temperature
PD 200
Topr 20 to +80
Tstg 55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
3
12
(0.95) (0.95)
1.9±0.1
2.9±0.2
10˚
(0.5)
Marking Symbol: 1H
1: Drain
2: Source
3: Gate
Minit3-F1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain current
Drain-sourse cutoff current
(G-S short)
ID VDS = 4.5 V, CO = 10 pF RD = 2.2 k± 1% 100
IDSS VDS = 4.5 V, VGS = 0
95
600 µA
480 µA
Mutual conductance
Noise voltage
Voltage gain
gm
NV
Gv1
Gv2
Gv3
∆Gv · f*
VD = 4.5 V, VGS = 0 f = 1 kHz
700 1 600
VD = 4.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, A-curve
VD = 4.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV f = 1 kHz
3 2
VD = 12 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV f = 1 kHz
VD = 1.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV f = 1 kHz
0 3.3
4.5 0.3
VD = 4.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV f = 1 kHz to 70 Hz
0
4
1.5
µS
µV
dB
dB
dB
dB
Voltage gain difference
∆Gv2 Gv1
∆Gv1 Gv3
0 3.5 dB
0 3.5 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : ∆Gv · fis assured for AQL0.065%. (the measurment method is used by source-grounded circuit.)
Publication date: August 2003
SJF00039AED
1

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