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Número de pieza | 2SK1822-01M | |
Descripción | N-channel MOS-FET | |
Fabricantes | Fuji Electric | |
Logotipo | ||
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FAP-IIIA Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
- Including G-S Zener-Diode
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC Converters
N-channel MOS-FET
60V 0,07Ω 20A 35W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
60
Continous Drain Current
I D 20
Pulsed Drain Current
I D(puls)
80
Continous Reverse Drain Current
I DR
20
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
P D 35
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±16V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=10A
VGS=4V
ID=10A
VGS=10V
Forward Transconductance
g fs
ID=10A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
t r ID=20A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Diode Forward On-Voltage
tf
V SD
RGS=25 Ω
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
60
1,0
6
Typ. Max.
1,5
0,09
0,055
12
600
260
150
7
30
100
70
1,45
90
2,0
500
1,0
10
0,11
0,07
900
390
240
11
45
150
110
2,18
130
Unit
V
V
µA
mA
µA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ.
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
Max.
62,5
3,57
Unit
°C/W
°C/W
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SK1822-01M.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK1822-01M | N-channel MOS-FET | Fuji Electric |
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