(PDF) 2SK1401A Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1401A
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 12 ID = 20 A 8 4 10 A 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 1.0 VGS = 10 V Pulse Test 0.8 ID = 20 A 10 A 5A 0.6 0.4 0.2 0 –40 0 40 80 120 160 Case Temperature TC (°C) 2SK1401, 2SK1401A Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 2 VGS = 10 V 1 0.5 15 V 0.2 0.1 0.5 12 5 10 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 50 VDS = 20 V Pulse Test 20 10 TC = 75°C 25°C 5 –25°C 2 1 0.5 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 5 5 Page

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PDF 2SK1401A Data sheet ( Hoja de datos )