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PDF 2SK1381 Data sheet ( Hoja de datos )

Número de pieza 2SK1381
Descripción N-CHANNEL MOS TYPE TRANSISTOR
Fabricantes Toshiba Semiconductor 
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2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DCDC Converter
Applications
Unit: mm
z 4-V gate drive
z Low drainsource ON-resistance : RDS (ON) = 25 m(typ.)
z High forward transfer admittance : |Yfs| = 33 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS 100 V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS ±20 V
Drain current
DC (Note 1)
Pulse (Note 1)
ID
IDP
50
A
200
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Drain power dissipation (Tc = 25°C)
PD
150 W
Channel temperature
Tch 150 °C
Storage temperature range
Tstg
55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-12-10

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5 2009-12-10

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