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PDF CXG1068N Data sheet ( Hoja de datos )

Número de pieza CXG1068N
Descripción SP4T Antenna Switch for GSM Dual band
Fabricantes Sony Corporation 
Logotipo Sony Corporation Logotipo



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No Preview Available ! CXG1068N Hoja de datos, Descripción, Manual

CXG1068N
SP4T Antenna Switch for GSM Dual band
For the availability of this product, please contact the sales office.
Description
The CXG1068N is a high power antenna switch
MMIC for use in Dualband GSM handsets.
One antenna can be routed to either of the 2Tx or
2Rx ports. This IC is designed using the Sony’s
GaAs J-FET process which enable the CXG1068N
to be operated with low voltage.
20 pin SSOP (Plastic)
Features
Low control voltage
Low insertion loss : 0.5 dB (Typ.) @900 MHz
0.65 dB (Typ.) @1.8 GHz
Small package :
SSOP-20pin (Pin interval of 0.5 mm pitch)
High power handling :
P1dB : 38 dBm (Typ.) 0/5 V control
Harmonics :
–31 dBm (Max.) Pin=35 dBm, 0/5 V control
Operating Conditions (Ta=25 °C)
Control voltage
Vctl (H)–Vctl (L): 2.5 to 5
V
Applications
Dualband GSM 900/GSM 1800 or GSM 900/GSM
1900 handsets.
Dualmode GSM/DECT handsets.
Structure
GaAs J-FET MMIC
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E98920A8X-TE

1 page




CXG1068N pdf
Recommended Circuit
11
12
CRF (100pF)
Ant 13
L1 56k
14
VDD
Cbypass
(100pF)
CTL1
RCTL (1k)
Cbypass (100pF)
CTL2
RCTL (1k)
Cbypass (100pF)
CTL3
RCTL (1k)
Cbypass (100pF)
CTL4
RCTL (1k)
Cbypass (100pF)
15
16
17
18
19
20
CXG1068N
CXG1068N
CRF (100pF)
10
56kL1
9
CRF (100pF)
8
56kL1
7
CRF (100pF)
6
L1
5
Tx1
Tx2
Rx1
4 Rx2
L1
3
RCTL (1k)
2 CTL3
Cbypass (100pF)
RCTL (1k)
1 CTL4
Cbypass (100pF)
Recommended to use DC blocking capacitors (CRF) and bypass capacitors (Cbypass).
Rctl : This resistor is used to give improved ESD performance. 1 kis recommended.
L1 : This inductor is used to give improved ESD performance.
Absolute Maximum Ratings (Ta=25 °C)
Control voltage
7
Operating temperature Topr –35 to +85
Storage temperature Tstg –65 to +150
V
°C
°C
—5—

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