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PDF AM82731-006 Data sheet ( Hoja de datos )
| Número de pieza | AM82731-006 | |
| Descripción | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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AM82731-006
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
......... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT IMPEDANCE MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 5.5 W. MIN. WITH 5.6 dB GAIN
BANDWIDTH = 400 MHz
.400 x .400 2NLFL (S042)
hermeticaly sealed
ORDER CODE
BRANDING
AM 82731-006
82731-6
DESCRIPTION
The AM82731-006 device is a medium power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 5:1 output VSWR. Low RF thermal
resistance, refractory/gold metallization, and auto-
matic wire bonding techniques ensure high reliability
and product consistency.
The AM82731-006 is supplied in the hermetic met-
al/ceramic package with internal input/output imped-
ance matching circuitry, and is intended for military
and other high reliability applications.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
Ic
Parameter
Power Dissipation* (TC ≤100°C)
Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
40
1.8
34
250
− 65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
*Applies only to rated RF amplifier operation
August 1992
3.75
°C/W
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AM82731-006.PDF ] | |
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