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PDF AM42-0040 Data sheet ( Hoja de datos )
| Número de pieza | AM42-0040 | |
| Descripción | GaAs MMIC VSAT Power Amplifier/ 2W 5.9 - 6.4 GHz | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM4AM2-402-0040400
GaAs MMIC VSAT Power Amplifier, 2W
5.9 - 6.4 GHz
Features
• High Linear Gain: 30 dB Typ.
• High Saturated Output Power: +33 dBm Typ.
• High Power Added Efficiency: 26% Typ.
• 50Ω Input/Output Broadband Matched
• High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0040 is a three-stage MMIC power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0040 employs an internally matched monolithic chip
with internally decoupled Gate and Drain bias networks. The
AM42-0040 is designed to be operated from a constant current
Drain supply. By varying the Gate bias voltage, the saturated
output power performance of this device can be tailored for
various applications.
The AM42-0040 is designed for use as an output stage or
driver amplifier for C-band VSAT transmitter systems. This
amplifier employs a fully monolithic chip and requires a
minimum of external components.
M/A-COM’s AM42-0040 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full chip
passivation for increased performance and reliability. These
amplifiers are 100% RF tested to ensure compliance to
performance specifications.
CR-15
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
Ordering Information
Part Number
AM42-0040
Package
Ceramic Bolt Down Package
Electrical Specifications: TA = +25°C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Frequency = 5.9 to 6.4 GHz
Parameter
Abbv.
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
Input VSWR
Output VSWR
Output Power
Output Power vs. Frequency
Output Power vs. Temperature
(with respect to TA=+25°C)
Drain Bias Current
Gate Bias Voltage
Gate Bias Current
Thermal Resistance
Second Harmonic
Third Harmonic
GL
VSWRIN
VSWROUT
PSAT
PSAT
PSAT
IDD
VGG
ΙGG
θJC
f2
f3
PIN ≤ -10 dBm
PIN ≤ -10 dBm
PIN ≤ -10 dBm
PIN = +10 dBm, IDD=1050 mA Typ.
PIN = +10 dBm, IDD=1050 mA Typ.
PIN = +10 dBm, IDD=1050 mA Typ.
TA= -40°C to +70°C
PIN = +10 dBm
PIN = +10 dBm, IDD=1050 mA Typ.
PIN = +10 dBm, IDD=1050 mA Typ.
25°C Heat Sink
PIN = +10 dBm, IDD=1050 mA Typ.
PIN = +10 dBm, IDD=1050 mA Typ.
dB
—
—
dBm
dB
dB
mA
V
mA
°C/W
dBc
dBc
27
—
—
31.7
—
—
900
-2.4
—
—
—
—
30
2.3:1
3.0:1
33.0
1.0
±0.4
1050
-1.2
5
5.6
-35
-45
—
2.7:1
—
34.3
1.5
—
1100
-0.4
20
—
—
—
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AM42-0040.PDF ] | |
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