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PDF AmMC008AWP Data sheet ( Hoja de datos )

Número de pieza AmMC008AWP
Descripción 2/ 4/ or 8 Megabyte 5.0 Volt-only Flash Miniature Card
Fabricantes Advanced Micro Devices 
Logotipo Advanced Micro Devices Logotipo



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PRELIMINARY
AmMC0XXA
2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card
DISTINCTIVE CHARACTERISTICS
s 2, 4, or 8 Mbytes of addressable Flash memory
s 5.0 Volt-only, single power supply operation
— Write and read voltage: 5.0 V ± 10%
— No additional supply current required for VPP
s Fast access time
— 100 or 150 ns access time
s CMOS low power consumption
— Typical active read current:
70 mA (word mode)
— Typical active erase/write current:
100 mA (word mode)
— Typical standby current:
10 µA (8 Mbyte card)
s High write endurance
— Guaranteed minimum 100,000 write/erase
cycles per card
— More than 1,000,000 cycles per card typical
s Uniform sector architecture
— 64K byte individually useable sectors
— Erase Suspend/Resume increases system level
performance
— BUSY# and RESET# signals
s Zero data retention power
— No power required to retain data
s Available in industrial temperature grade
(–40°C to +85°C)
s Miniature Card standard form factor
— True interchangeability
— 60-pad connector
— Supports multiple technologies
— Sonic welded stainless steel case
— PCMCIA Type II adapter available
— Selectable byte- or word-wide configuration
— Small form factor (38 mm x 33 mm x 3.5 mm)
s 60 connection bus
— 16-bit data bus
— 25-bit address bus
— Easy system integration
— Low cost implementation
— Low cost cards
s Consumer-friendly mechanicals
— User can easily insert and remove card, upgrade
memory, and add applications
s Voltage level keying
— Does not allow a 5 V card to plug into a 3 V
system and vice versa
— Single power supply design
— System does not need a separate program
voltage supply; only one is necessary to read
and write
GENERAL DESCRIPTION
The Miniature Card is an expansion card that provides
a high-performance, small form factor solution for data
and file storage to the portable, handheld market,
which includes audio, digital film, wireless, and PDA
(Portable Digital Assistant) applications. The Miniature
Card provides a low cost, low power, high performance
interface for memory cards.
Miniature cards can be easily “snapped” into the back
of an electronic system and can be readily removed
and replaced by end users. AMD’s 5 V Flash Miniature
Cards are manufactured using AMD’s industry leading
5.0 volt-only, single-power-supply Am29F080B and
Am29F017B Flash Memory devices, ensuring high reli-
ability and excellent performance. The Miniature Card
is less than 30% of the size of a PCMCIA memory card.
Applications include digital voice recorders, pocket
PCs and intelligent organizers, smart cellular tele-
phones, voice and data messaging pagers, digital still
cameras and portable instrumentation equipment.
The Miniature Card specification will be defined by
PCMCIA as of October 1997. The participating associ-
ation members include major Flash memory vendors
and leading consumer electronics OEMs. The goal of
the Miniature Card specification is to promote an open,
interoperable small-form-factor memory card standard.
For more information on the Miniature Card specifica-
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 20975 Rev: D Amendment/+1
Issue Date: May 1998

1 page




AmMC008AWP pdf
BLOCK DIAGRAM
VCC
PRELIMINARY
VCC
BUSY#
RESET#
10K 10K
RY/BY#
VCC
10K
RESET# to all Flash devices
WE#
OE#
D8–D15
D0–D7
A0–A24
Write Protect
Switch
WE# to all Flash devices
OE# to all Flash devices
CEL#
CEH#
VCC VCC
100K 100K
A21
CEL0#
CEH0#
CEL1#
CEH1#
Decoder*
VSS VCC
A0-A20*** D0-D7
CE#
WE# S0**
OE#
RESET# RY/BY#
VSS VCC
A0-A20*** D0-D7
CE#
WE# S2**
OE#
RESET# RY/BY#
VSS VCC
A0-A20*** D8-D15
WE# S1**
OE#
RESET# RY/BY#
VSS VCC
A0-A20*** D8-D15
CE#
WE# S3**
OE#
RESET# RY/BY#
20975D-2
* Decoder used on 8 Mbyte card only. Not used on 2 and 4 Mbyte cards.
** 2 Mbyte card: Two Am29F080B devices, S0 and S1
4 Mbyte card: Two Am29F017B devices, S0 and S1
8 Mbyte card: Four Am29F017B devices, S0...S3
*** A0–A19 on 2 Mbyte card; A0–A20 on 4 and 8 Mbyte cards.
Note: On the 2 Mbyte card, A20–A24 are not connected. On the 4 Mbyte cards, A21–A24 are not connected. On the 8 Mbyte
cards, A22-A24 are not connected. Connections not shown in this diagram are not connected internally.
AmMC0XXA
5

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AmMC008AWP arduino
PRELIMINARY
Data Protection
An optional mechanical write protect switch provides
user-initiated write protection. When this switch is acti-
vated, WE# is internally forced high. The Flash memory
command register is disabled from accepting any write
commands. This prevents the card from responding to
any commands (for example, an Autoselect command).
See Figure 3.
Write Enabled
Write Disabled
20975D-4
Figure 3. Write Protect Switch
(Card Right Side View)
In addition to card-level data protection, AMD Flash
Miniature Cards offer several device-level data protec-
tion features.
Device-Level Data Protection
AMD Flash memory devices offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transi-
tions. During power up, each device automatically
resets the internal state machine to the read mode. The
control register architecture allows alteration of the
memory contents only occurs after successful comple-
tion of specific multi-bus cycle command sequences.
AMD Flash memory devices also incorporate the fol-
lowing features to prevent inadvertent write cycles
resulting from VCC power-up and power-down
transitions or system noise.
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-
up and power-down, the AMD memory devices in
the Miniature Card lock out write cycles for VCC <
VLKO (see “DC Characteristics” on page 25 for volt-
ages). When VCC < VLKO, the command register is
disabled, all internal program/erase circuits are dis-
abled, and the device resets to the read mode.
These memory devices ignore all writes until VCC >
VLKO. The user must ensure that the control pins
are in the correct logical state when VCC > VLKO to
prevent unintentional writes.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#,
or WE# will neither initiate a write cycle nor change the
command registers.
Logical Inhibit
Writing is inhibited by holding any one of OE# = VIL,
CE# = VIH, or WE# = VIH. To initiate a write cycle CE#
and WE# must be a logical zero while OE# is a logical
one.
Power-Up Write Inhibit
Power-up of the device with CE# = WE# = VIL and OE#
= VIH will not accept commands on the rising edge of
WE#. The internal state machine is automatically reset
to the read mode on power-up.
Read Mode
Two Card Enable (CE#) pins are available on the
memory card. Both CE# pins must be active low for
word-wide read accesses. Only one CE# is required for
byte-wide accesses. The CE# pins select and deter-
mine when to apply power to the high-byte and low-
byte memory devices. The Output Enable (OE#) con-
trols gating accessed data from the memory device
outputs.
The Miniature card automatically powers up in the
read/reset state. In this case, a command sequence is
not required to read data. Standard microprocessor
read cycles will retrieve array data. This default value
ensures that no spurious alteration of the memory
content occurs during the power transition. Refer to the
AC Read Characteristics and Waveforms for the spe-
cific timing parameters.
Output Disable
Data outputs from the card are disabled when OE# is
at a logic-high level. Under this condition, outputs are in
the high-impedance state.
Standby Operations
Byte-wide read accesses only require half of the
read/write output buffer (x16) to be active. In addition,
only one memory device is active within either the high
order or low order bank. Activation of the appropriate
half of the output buffer is controlled by the combination
of both CE# pins. The CE# pins also control power to
the high and low-order banks of memory. Outputs of
the memory bank not selected are placed in the high
impedance state. The individual memory device is acti-
vated by the address decoders. The other memory
devices operate in standby. An active memory device
continues to draw power until completion of a write or
erase operation if the card is de-selected in the process
of one of these operations.
AmMC0XXA
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