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PDF AN77L00M Data sheet ( Hoja de datos )

Número de pieza AN77L00M
Descripción 3-pin Low Power Loss Voltage Regulato (100mA Type)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! AN77L00M Hoja de datos, Descripción, Manual

Voltage Regulators
AN77L00/AN77L00M Series
3-pin Low Power Loss Voltage Regulato r(100mA Type)
s Overview
The AN77L00/AN77L00M series is a stabilized constant
voltage power supply with a low input/output voltage(0.3V
max.). It is suitable for the low-voltage equipment using
batteries, and consumer/industrial equipment with great
fluctuation of the supply voltage.
A wide range of output voltage is available from 3V
through 10V.
AN77L00 Series
5.0±0.2
Unit : mm
4.0±0.2
s Features
Minimum input/output voltage difference : 0.3V(max.)
Built-in overcurrent limiting circuit
Built-in rush current preventive circuit at saturation volt-
age rise time
Built-in overheat protective circuit
Built-in input short-circuit protective circuit
+0.2
0.45 – 0.1
2.54
2.3±0.2
2 31
3-pin SIL Plastic Package (TO-92) (SSIP003-P-0000)
AN77L00M Series
Unit : mm
4.6max.
1.8max.
1.6max.
4.5
0.48max.
0.58max.
1.5
3.0
0.44max.
123
3-pin SIL Mini Power Type Plastic Package (TO-220F) (SSIP003-P-0000D)
1

1 page




AN77L00M pdf
Voltage Regulators
AN77L00/AN77L00M Series
s Electrical Characteristics (Ta=25˚C)
AN77L07/M (7V, 100mA Type)
Parameter
Output voltage
Input stability
Load stability
Bias current under no load
Bias current fluctuation under load
Bias current before regulation start
Ripple rejection ratio
Min. input/output voltage difference (1)
Min. input/output voltage difference (2)
Output noise voltage
Output voltage temperature coefficient
Symbol
VO
REGIN
REGL
Ibias
Ibias
Irush
RR
VDIF (min)1
VDIF (min) 2
Vno
VO/Ta
Condition
Tj=25˚C
VI=7.78 to 17.78V, Tj=25˚C
IO= 0 to 100mA, Tj=25˚C
IO= 0mA, Tj=25˚C
IO= 0 to 100mA, Tj=25˚C
VI= 6.3V, IO= 0mA, Tj=25˚C
VI=7.78 to 9.78V, f=120Hz
VI= 6.3V, IO= 50mA, Tj=25˚C
VI= 6.3V, IO=100mA, Tj=25˚C
f=10Hz to 100kHz
Tj= –30 to+125˚C
min
6.72
55
typ max Unit
7.0 7.28
V
5 70 mV
11 70 mV
1.1 1.6 mA
3 5 mA
1.5 5 mA
65 dB
0.12 0.25
V
0.26 0.48
V
120 µV
0.46 mV/˚C
Note 1) Under Tj=25˚C, each test duration can be set short (within 10ms) and the characteristic drift with temperature rise at
joints of the chip may be ignored.
Note 2) VI= 8V, IO=50mA, CO=10µF unless otherwise specified.
AN77L08/M (8V, 100mA Type)
Parameter
Symbol
Condition
min typ max Unit
Output voltage
Input stability
Load stability
Bias current under no load
Bias current fluctuation under load
Bias current before regulation start
Ripple rejection ratio
Min. input/output voltage difference (1)
Min. input/output voltage difference (2)
Output noise voltage
Output voltage temperature coefficient
VO
REGIN
REGL
Ibias
Ibias
Irush
RR
VDIF (min)1
VDIF (min) 2
Vno
VO/Ta
Tj=25˚C
VI= 8.82 to 18.82V, Tj=25˚C
IO= 0 to 100mA, Tj=25˚C
IO= 0mA, Tj=25˚C
IO= 0 to 100mA, Tj=25˚C
VI=7.2V, IO= 0mA, Tj=25˚C
VI= 8.82 to 10.82V, f=120Hz
VI=7.2V, IO=50mA, Tj= 25˚C
VI=7.2V, IO=100mA, Tj= 25˚C
f=10Hz to 100kHz
Tj= –30 to +125˚C
7.68
8 8.32
V
5 80 mV
12 80 mV
1.1 1.6 mA
3 5 mA
1.5 5 mA
53 63
dB
0.12 0.25
V
0.27 0.51
V
135 µV
0.53 mV/˚C
Note 1) Under Tj=25˚C, each test duration can be set short (within 10ms) and the characteristic drift with temperature rise at
joints of the chip may be ignored.
Note 2) VI=9V, IO=50mA, CO=10µF unless otherwise specified.
AN77L09/M (9V, 100mA Type)
Parameter
Symbol
Condition
min typ max Unit
Output voltage
Input stability
Load stability
Bias current under no load
Bias current fluctuation under load
Bias current before regulation start
Ripple rejection ratio
Min. input/output voltage difference (1)
Min. input/output voltage difference (2)
Output noise voltage
Output voltage temperature coefficient
VO
REGIN
REGL
Ibias
Ibias
Irush
RR
VDIF (min) 1
VDIF (min) 2
Vno
VO/Ta
Tj=25˚C
VI=9.86 to 19.86V, Tj=25˚C
IO= 0 to 100mA, Tj=25˚C
IO= 0mA, Tj=25˚C
IO= 0 to 100mA, Tj=25˚C
VI=8.1V, IO= 0mA, Tj=25˚C
VI=9.86 to 11.86V, f=120Hz
VI=8.1V, IO= 50mA, Tj=25˚C
VI=8.1V, IO=100mA, Tj=25˚C
f=10Hz to 100kHz
Tj=–30 to+125˚C
8.64
9 9.36
V
6 90 mV
13 90 mV
1.2 1.7 mA
3 5 mA
1.5 5 mA
52 62
dB
0.13 0.25
V
0.28 0.53
V
150 µV
0.6 mV/˚C
Note 1) Under Tj=25˚C, each test duration can be set short (within 10ms) and the characteristic drift with temperature rise at
joints of the chip may be ignored.
Note 2) VI=10V, IO=50mA, CO=10µF unless otherwise specified.
5

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