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PDF BAT754 Data sheet ( Hoja de datos )
| Número de pieza | BAT754 | |
| Descripción | Schottky barrier double diodes | |
| Fabricantes | NXP Semiconductors | |
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BAT754 series
Schottky barrier diodes
Rev. 3 — 9 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VR reverse voltage
VF forward voltage IF = 100 mA
IR
reverse current
VR = 25 V
[1] Pulse test: tp 300 s; 0.02.
2. Pinning information
Min Typ Max Unit
- - 30 V
[1] -
600 -
mV
[1] - - 2 A
Table 2.
Pin
BAT754
1
2
3
Pinning
Description
anode
not connected
cathode
Simplified outline Graphic symbol
3
12
3
12
n.c.
006aaa436
1 page  
NXP Semiconductors
9. Package outline
BAT754 series
Schottky barrier diodes
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
Dimensions in mm
1.9
Fig 4. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
10. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
BAT754 series SOT23 4 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-215
-235
[1] For further information and the availability of packing methods, see Section 14.
BAT754_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 October 2012
© NXP B.V. 2012. All rights reserved.
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