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PDF CY27C256-150 Data sheet ( Hoja de datos )
| Número de pieza | CY27C256-150 | |
| Descripción | 32K x 8-Bit CMOS EPROM | |
| Fabricantes | Cypress Semiconductor | |
| Logotipo |  |
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fax id: 30131CY27C256
CY27C256
32K x 8-Bit CMOS EPROM
Features
• Wide speed range
— 45 ns to 200 ns (commercial and military)
• Low power
— 248 mW (commercial)
— 303 mW (military)
• Low standby power
— Less than 83 mW when deselected
• ±10% Power supply tolerance
Functional Description
The CY27C256 is a high-performance 32,768-word by 8-bit
CMOS EPROM. When disabled (CE HIGH), the CY27C256
automatically powers down into a low-power stand-by mode.
The CY27C256 is packaged in the industry standard 600-mil
DIP, PLCC, and TSOP packages. The CY27C256 is also avail-
able in a CerDIP package equipped with an erasure window
to provide for reprogrammability. When exposed to UV light,
the EPROM is erased and can be reprogrammed. The mem-
ory cells utilize proven EPROM floating gate technology and
byte-wide intelligent programming algorithms.
The CY27C256 offers the advantage of lower power and su-
perior performance and programming yield. The EPROM cell
requires only 12.5V for the super voltage, and low current re-
quirements allow for gang programming. The EPROM cells
allow each memory location to be tested 100% because each
location is written into, erased, and repeatedly exercised prior
to encapsulation. Each EPROM is also tested for AC perfor-
mance to guarantee that after customer programming, the
product will meet both DC and AC specification limits.
Reading the CY27C256 is accomplished by placing active
LOW signals on OE and CE. The contents of the memory location
addressed by the address lines (A0 - A14) will become available on
the output lines (O0 - O7).
Logic Block Diagram
A14
A13
A12
A11
A10
ROW
ADDRESS
256 x 1024
PROGRAMABLE
ARRAY
8 x 1 OF 128
MULTIPLEXER
A9
A8
A7 ADDRESS
A6 DECODER
A5
A4
A3
COLUMN
A2 ADDRESS
A1
A0
POWER–DOWN
CE
OE
Pin Configurations
O7
DIP/Flatpack
LCC/PLCC[1]
O6 VPP 1 28 VCC
A12 2
27 A14
4 3 2 1 32 3130
O5
O4
A7 3
26 A13
A6 4
25 A8
A5 5
24 A9
A4 6 27C25623 A11
A3 7
22 OE
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
27C256
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
A2 8
21 A10
A0 11
23 CE
O3
A1 9
A0 10
20 CE
19 O7
NC 12
22 O7
O0 13
21 O6
14151617 181920
O0 11
18 O6
O1 12
17 O5
O2
O2 13
16 O4
GND 14
15 O3
27c256–3
27c256–2
O1
O0
27c256–1
Note:
1. For PLCC only: Pins 1 and 17 are common and tied to the die attach pad. They must therefore be DU (don’t use) for the PLCC package.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
May 1993 – Revised August 1994
1 page  
CY27C256
Switching Waveform
ICC
SUPPLY
CURRENT
A0 - A14
ADDRESS
tPD
50%
tPU POWER–DOWN CONTROLLED BY CE
50%
OE, CE
tAA
tOH
O0 - O7 PREVIOUS DATA VALID
(tHZOE)
tHZCE
DATA VALID
(tOE)
tACE
HIGH Z
27c256–8
Erasure Characteristics
Wavelengths of light less than 4000 Å begin to erase the
27C256 in the windowed package. For this reason, an opaque
label should be placed over the window if the EPROM is ex-
posed to sunlight or fluorescent lighting for extended periods
of time.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 Å for a minimum dose (UV intensity mul-
tiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet
lamp with a 12 mW/cm2 power rating, the exposure time would
be approximately 35 minutes. The CY27C256 needs to be
Table 1. CY27C256 Mode Selection.
Mode
within 1 inch of the lamp during erasure. Permanent damage
may result if the EPROM is exposed to high-intensity UV light
for an extended period of time. 7258 Wsec/cm2 is the recom-
mended maximum dosage.
Programming Modes
Programming support is available from Cypress as well as
from a number of third-party software vendors. For detailed
programming information, including a listing of software pack-
ages, please see the EPROM Programming Information locat-
ed at the end of this section. Programming algorithms can be
obtained from any Cypress representative.
Pin Function[8]
A14-A0
OE
CE
VPP O7-O0
Read
A14-A0
VIL
VIL
X[9] O7-O0
Output Disable
A14-A0
VIH
VIL
X
High Z
Power Down
A14-A0
X
VIH X
High Z
Notes:
8. X can be VIL or VIH
9. VPP should not exceed VCC in read mode.
5
5 Page 
Package Diagrams (Continued)
32-Lead Thin Small Outline Package Z32
CY27C256
© Cypress Semiconductor Corporation, 1994. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
11 Page | ||
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| PDF Descargar | [ Datasheet CY27C256-150.PDF ] | |
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