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PDF HM6264BI Data sheet ( Hoja de datos )
| Número de pieza | HM6264BI | |
| Descripción | 64k SRAM (8-kword x 8-bit) Wide Temperature Range version | |
| Fabricantes | Hitachi Semiconductor | |
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HM6264BI Series
64k SRAM (8-kword × 8-bit)
Wide Temperature Range version
ADE-203-492C (Z)
Rev. 3.0
May. 8, 2000
Description
The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and
low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot
print pitch width), 600 mil plastic DIP, is available for high density mounting.
Features
• Single 5 V supply: 5 V ± 10%
• Access time: 100/120 ns (max)
• Power dissipation:
Standby: 10 µW (typ)
Operation: 15 mW (typ) (f = 1 MHz)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output
Three state output
• Directly TTL compatible
All inputs and outputs
• Battery backup operation capability
• Operating temperature range: –40˚C to +85˚C
1 page  
HM6264BI Series
DC Characteristics (Ta = –40 to +85°C, VCC = 5 V ±10%, VSS = 0 V)
Parameter
Symbol Min Typ*1 Max Unit Test conditions
Input leakage current
Output leakage current
|ILI|
|ILO|
Operating power supply ICCDC
current
Average operating power ICC1
supply current
I CC2
Standby power supply
current
I SB
——2
µA Vin = VSS to VCC
——2
µA CS1 = VIH or CS2 = VIL or OE = VIH or
WE = VIL, VI/O = VSS to VCC
—7
20 mA CS1 = VIL, CS2 = VIH, II/O = 0 mA
others = VIH/VIL
— 30 50 mA Min cycle, duty = 100%,
CS1 = VIL, CS2 = VIH, II/O = 0 mA
others = VIH/VIL
— 3 8 mA Cycle time = 1 µs, duty = 100%, II/O = 0 mA
CS1 ≤ 0.2 V, CS2 ≥ VCC – 0.2 V,
VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V
— 1 3 mA CS1 = VIH, CS2 = VIL
I
*2
SB1
—2
200 µA CS1 ≥ VCC – 0.2 V, CS2 ≥ VCC – 0.2 V or
0 V ≤ CS2 ≤ 0.2 V, 0 V ≤ Vin
Output low voltage
VOL — — 0.4 V IOL = 2.1 mA
Output high voltage
VOH 2.4 — — V IOH = –1.0 mA
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. VIL min = –0.3V
Capacitance (Ta = 25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ
Input capacitance*1
Cin — —
Input/output capacitance*1
CI/O
——
Note: 1. This parameter is sampled and not 100% tested.
Max
5
7
Unit
pF
pF
Test conditions
Vin = 0 V
VI/O = 0 V
5
5 Page 
HM6264BI Series
Write Timing Waveform (2) (OE Low Fixed) (OE = VIL)
Address
CS1
tWC
Valid address
tAW
tCW
*1
tWR
CS2
WE
Dout
Din
tAS
High Impedance
tWP
tWHZ
tOW
tDW tDH
Valid data
tOH
*2
*4
*3
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet HM6264BI.PDF ] | |
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