PDF HPMX-2003 Data sheet ( Hoja de datos )

Número de pieza	HPMX-2003
Descripción	Silicon Bipolar RFIC 900 MHz Vector Modulator
Fabricantes	Agilent(Hewlett-Packard)
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No Preview Available ! Silicon Bipolar RFIC 900 MHz Vector Modulator Technical Data HPMX-2003 Features • 800–1000 MHz Output Frequency Range • +6 dBm Peak Pout • Unbalanced 50 Ω Output • Internal 90° Phase Shifter • 5 Volt, 36 mA Bias • SO-16 Surface Mount Package Applications • Direct Modulator for 900 MHz Cellular Telephone Handsets, Including GSM, JDC, and NADC • Direct Modulator for 900␣ MHz ISM Band Spread- Spectrum Transmitters and LANs Functional Block Diagram Plastic SO-16 Package Pin Configuration VCC 1 VCC 2 GROUND 3 GROUND 4 Qref 5 Qmod 6 LOin 7 LOgnd 8 16 VCCL 15 RFout 14 GROUND 13 GROUND 12 Iref 11 Imod 10 GROUND 9 DO NOT CONNECT Description Hewlett Packard’s HPMX-2003 is a Silicon RFIC direct conversion vector modulator designed for use at output frequencies between 800␣ MHz and 1 GHz. Housed in a SO-16 surface mount plastic pack- age, the IC contains two matched Gilbert cell mixers, an RC phase shifter, a summer, and an output amplifier complete with 50 Ω impedance match and DC block. This device is suitable for use in direct and offset-loop modulated portable and mobile telephone handsets for cellular systems such as GSM, North American Digital Cellular and Japan Digital Cellu- lar. It can also be used in digital transmitters operating in the 900 MHz ISM (Industrial-Scien- tific-Medical) band, including use in Local Area Networks (LANs). Imod Iref LO + LO – Qref Qmod I MIXER 0° φ ΣPHASE SHIFTER SUMMER 90° OUTPUT AMPLIFIER • Q MIXER VCC VCCL RFout 50 Ω ZO unbalanced The HPMX-2003 is fabricated with Hewlett-Packard’s 25 GHz ISOSAT-II process, which combines stepper lithography, ion-implantation, self-alignment techniques, and gold metallization to produce RFICs with superior performance, uniformity and reliability. 5965-9103E 7-38 1 page HPMX-2003 Typical Performance 45 50 42 45 39 40 36 35 33 30 30 -55 -35 -15 5 25 45 65 85 TEMPERATURE (°C) Figure 4. HPMX-2003 Device Current vs. Temperature, VCC = 5 V. 25 4 4.5 5 5.5 6 VCC (VOLTS) Figure 5. HPMX-2003 Device Current vs. VCC, TA = 25°C. 10 8 6 4 2 0 -55 -35 -15 5 25 45 65 85 TEMPERATURE (°C) Figure 6. HPMX-2003 Power Output vs. Temperature at 900 MHz, LO␣ =␣ -12␣ dBm, VImod = VQmod = 3.75 V, VIref = VQref = 2.5 V, VCC = 5 V. 10 4.25 V 8 3.75 V 6 4 3.25 V 2 0 3.0 V -2 -4 -6 2.75 V -8 -10 4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 VCC (VOLTS) Figure 7. HPMX-2003 Power Output vs. VCC and I, Q Level at 900 MHz, LO␣ =␣ -12 dBm, VImod = VQmod, TA = 25°C. 10 8 6 4 2 0 -25 -20 -15 -10 -5 LO INPUT POWER (dBm) 0 Figure 8. HPMX-2003 Power Output vs. LO Level at 900 MHz, VCC = 5 V, VImod = VQmod = 3.75 V, TA = 25°C. 5:1 5:1 2:1 1.8:1 4:1 4:1 1.6:1 3:1 3:1 1.4:1 2:1 -55 °C 1:1 750 85 °C 850 950 FREQUENCY (MHz) 1050 Figure 9. HPMX-2003 LO Input VSWR vs. Frequency and Temperature, VCC␣ =␣ 5 V. 2:1 1:1 750 -55 °C 85 °C 850 950 FREQUENCY (MHz) 1050 Figure 10. HPMX-2003 Output VSWR vs. Frequency and Temperature. 7-42 1.2:1 1:1 4 4.5 5 5.5 6 VCC (VOLTS) Figure 11. HPMX-2003 Output VSWR vs. VCC at 900 MHz, TA = 25°C. 5 Page HPMX-2003 Typical Performance Data 00 RES BW = 3 kHz VBW = 30 Hz SWP = 60.0 SEC. -50 -50 RES BW = 3 kHz VBW = 30 Hz SWP = 60.0 SEC. GSM Applications 0 RES BW = 3 kHz VBW = 30 Hz SWP = 60.0 SEC. -50 -100 899 900 FREQUENCY (MHz) Figure 22. HPMX-2003 GSM Modulation Spectrum at -40°C. 2:1 -100 -100 901 899 900 901 899 900 901 FREQUENCY (MHz) FREQUENCY (MHz) Figure 23. HPMX-2003 GSM Modulation Spectrum at 25°C. Figure 24. HPMX-2003 GSM Modulation Spectrum at 85°C. 80 0 1.75:1 1.5:1 POWER > 7 6 1.25:1 < VSWR 5 1:1 880 890 900 4 910 920 930 FREQUENCY (MHz) Figure 25. HPMX-2003 Output VSWR and Power vs. Frequency, VCC = 5 V, LO␣ = -12 dBm, VImod = VQmod = 3.75 V, Unbalanced, VIref = VQref = 2.5 V, TA␣ =␣ 25 °C. 8 -10 -20 -20 -40 85 °C -30 -40 850 -55 °C 25 °C 85 °C 875 900 925 950 -60 -80 850 875 -55 °C 25 °C 900 925 950 FREQUENCY (MHz) Figure 26. HPMX-2003 LO Leakage vs. Frequency and Temperature (Without Offset Adjustment), VCC = 5 V, LO␣ =␣ -12 dBm, VImod = VQmod = VIref = VQref = 2.5 V. FREQUENCY (MHz) Figure 27. LO leakage vs. Frequency and Temperature (With 25°C Offset Adjustment), VCC = 5 V, LO = -12 dBm, VIref = VQref = 2.5 V. 14 6 0.5 85 °C 2 -55 °C -55 °C 4 00 2 -0.5 -2 85 °C 0 -25 -20 -15 -10 -5 0 -1 0 90 180 270 360 -4 0 90 180 270 360 LO INPUT POWER (dBm) INPUT PHASE (DEGREES) INPUT PHASE (DEGREES) Figure 28. HPMX-2003 Power Output vs. LO Input Power at 900 MHz, VCC = 5␣ V, VImod = VQmod = 3.75 V, Unbalanced, VIref = VQref = 2.5 V, TA = 25°C. Figure 29. HPMX-2003 Vector Amplitude Error vs. Input Phase and Temperature at 900 MHz, VCC = 5 V, LO␣ = -12 dBm, VIref = VQref= 2.5 V. Figure 30. HPMX-2003 Vector Phase Error vs. Input Phase and Temperature at 900 MHz, VCC = 5 V, LO = -12 dBm, Unbalanced, VIref = VQref = 2.5 V. Note: Modulation spectrum test conditions as follows: VCC = 5 V, LO = -12 dBm at 900 MHz, VImod = VQmod = 2.5 Vp-p, unbalanced, average level = 2.5 V, VIref = VQref = 2.5 V, bit clock rate: 270 kHz, baseband filter: α = 0.3 GMSK. 7-48 11 Page

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