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Número de pieza | HMJE13003D | |
Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
Fabricantes | Hi-Sincerity Mocroelectronics | |
Logotipo | ||
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No Preview Available ! HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200207
Issued Date : 1993.04.12
Revised Date : 2002.05.08
Page No. : 1/4
HMJE13003D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
• High Voltage, High Speed Power Switch
• Switch Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents (Ta=25°C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 9 V
IC Collector Current ........................................................................................ Continuous 1.5 A
IB Base Current ............................................................................................. Continuous 0.75 A
Characteristics (Ta=25°C)
Symbol
Min. Typ.
BVCEX
BVCEO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
700
400
-
-
-
-
-
-
-
8
5
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
1
3
1
1.2
40
25
Unit Test Conditions
V IC=1mA, VBE(off)=1.5V
V IC=10mA
mA VEB=9V
mA VCE=700V, VBE(off)=1.5V
mV IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
V IC=1.5A, IB=0.5A
V IC=0.5A, IB=0.1A
V IC=1A, IB=0.25A
IC=0.5A, VCE=2V
IC=1A, VCE=2V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13003D
HSMC Product Specification
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet HMJE13003D.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMJE13003 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
HMJE13003D | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
HMJE13003T | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
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