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PDF HS9-65647RH Data sheet ( Hoja de datos )
| Número de pieza | HS9-65647RH | |
| Descripción | Radiation Hardened 8K x 8 SOS CMOS Static RAM | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HS-65647RH
August 1995
Radiation Hardened
8K x 8 SOS CMOS Static RAM
Features
Functional Diagram
• 1.2 Micron Radiation Hardened SOS CMOS
- Total Dose 3 x 105 RAD (Si)
- Transient Upset >1 x 1011 RAD (Si)/s
- Single Event Upset < 1 x 10-12 Errors/Bit-Day
• Latch-up Free
• LET Threshold >250 MEV/mg/cm2
• Low Standby Supply Current 10mA (Max)
• Low Operating Supply Current 100mA (2MHz)
• Fast Access Time 50ns (Max), 35ns (Typ)
• High Output Drive Capability
• Gated Input Buffers (Gated by E2)
• Six Transistor Memory Cell
• Fully Static Design
• Asynchronous Operation
• CMOS Inputs
• 5V Single Power Supply
• Military Temperature Range -55oC to +125oC
• Industry Standard JEDEC Pinout
AI
ROW
ROW
DECODER
128 X 512
MEMORY ARRAY
I/O0
I/O7
E2
E1
G
W
INPUT
DATA
CIRCUIT
COLUMN I/O
COLUMN DECODER
AI COL
CONTROL
CIRCUIT
E1 E2
TRUTH TABLE
GW
MODE
Description
X 0 X X Low Power Standby
1 1 X X Disabled
The Intersil HS-65647RH is a fully asynchronous 8K x 8
radiation hardened static RAM. This RAM is fabricated using
0
1
1
1 Enabled
the Intersil 1.2 micron silicon-on-sapphire CMOS technology.
This technology gives exceptional hardness to all types of
0
1
0
1 Read
radiation, including neutron fluence, total ionizing dose, high
intensity ionizing dose rates, and cosmic rays.
0 1 X 0 Write
Low power operation is provided by a fully static design. Low
standby power can be achieved without pull-up resistors,
due to the gated input buffer design.
Ordering Information
PART NUMBER
HS1-65647RH-Q
HS1-65647RH-8
HS1-65647RH/Proto
HS1-65647RH/Sample
HS9-65647RH-Q
HS9-65647RH-8
HS9-65647RH/Proto
HS9-65647RH/Sample
HS9A-65647RH-Q
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
+25oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
+25oC
-55oC to +125oC
PACKAGE
28 Lead SBDIP
28 Lead SBDIP
28 Lead SBDIP
28 Lead SBDIP
28 Lead Ceramic Flatpack
28 Lead Ceramic Flatpack
28 Lead Ceramic Flatpack
28 Lead Ceramic Flatpack
36 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
824
Spec Number 518729
File Number 2928.2
1 page  
Specifications HS-65647RH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Write Enable High to Out-
put ON
TWHQX VDD = 4.5V and 5.5V
Chip Enable to Output ON
TE1LQX VDD = 4.5V and 5.5V
TE2HQX
Output Enable to Output
ON
TGLQX VDD = 4.5V and 5.5V
Chip Enable to Output in
High Z
TE1HQZ VDD = 4.5V and 5.5V
TE2LQZ
Output Disable to Output in
High Z
TGHQZ VDD = 4.5V and 5.5V
Output Hold from Address
Change
TAXQX VDD = 4.5V and 5.5V
NOTES
1
TEMPERATURE
-55oC ≤ TA ≤ +125oC
MIN MAX UNITS
0 - ns
1
-55oC ≤ TA ≤ +125oC
0
-
ns
1
-55oC ≤ TA ≤ +125oC
0
-
ns
1
-55oC ≤ TA ≤ +125oC
-
15
ns
1
-55oC ≤ TA ≤ +125oC
-
15
ns
1
-55oC ≤ TA ≤ +125oC
0
-
ns
NOTES:
1. The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
2. Applies to DIP device types only.
3. Applies to Flatpack device types only.
4. All measurements referenced to device GND.
TABLE 4. POST 300K RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Standby Supply Current
IDDSB
VDD = 5.5V, IO = 0mA, E1 = VDD,
E2 = 0V, VI = VDD or GND
Enabled Supply Current
IDDEN
VDD = 5.5V, IO = 0mA, E1 = 0.0V,
E2 = VDD, VI = VDD or GND
Operating Supply Current
(Note 2)
IDDOP
VDD = 5.5V, IO = 0mA, f = 2MHz,
E = 0V,VI = VDD or GND
Data Retention Supply Current IDDDR VDD = 2.0V, IO = 0mA, E = VDD
TEMPERATURE
+25oC
MIN MAX UNITS
- 10 mA
+25oC
- 82 mA
+25oC
- 100 mA
+25oC
- 6 mA
NOTES:
1. DC parameters not listed in this table are tested at the +25oC pre-irradiation test limits. All AC parameters are tested at the +25oC pre-
irradiation test limits.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
Spec Number 518729
828
5 Page 
HS-65647RH
Performance Curves
HS-65647RH TYPICAL PERFORMANCE CHARACTERISTICS
TA = +25oC, Unless Otherwise Specified
13 7
12
11 6
10
95
8
74
6
3
5
4
2
3
21
1
0
0
200 400 600 800 1000 1200 1400
TOTAL DOSE (KRAD)
FIGURE 6
0
0.1
0.1 10
ANNEAL TIME (HOURS)
FIGURE 7
10 100
100
9 90
8 80
7 70
6 60
5 50
4 40
3 30
2
1
0
-60 -40 -20
0 20 40 60 80 100 120
TEMPERATURE (oC)
FIGURE 8
20
10
0
-60 -40 -20
0 20 40 60
TEMPERATURE (oC)
FIGURE 9
80 100 120
120
110
100
90
80
70
60
50
40
30
20
-60 -40 -20
0 20 40 60 80 100 120
TEMPERATURE (oC)
FIGURE 10
106
102
98
94
90
86
82
78
74
70
66
62
58
01234 5 678
FREQUENCY (MHz)
FIGURE 11
9 10
Spec Number 518729
834
11 Page | ||
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