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PDF ASI10612 Data sheet ( Hoja de datos )
| Número de pieza | ASI10612 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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Hay una vista previa y un enlace de descarga de ASI10612 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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HF150-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50F is Designed for
FEATURES:
• PG = 14 dB min. at 150 W/30 MHz
• IMD3 = 100 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCBO
110 V
VCEO
55 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
233 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.75 OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
E
.112x45° L
C
C
B
B
E
E
H
D
G
F
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
D .720 / 18.28
.255 / 6.48
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K
L .980 / 24.89
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10612
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCES
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 10 mA
ICEO
VCE = 30 V
ICES VCE = 60 V
hFE VCE = 6 V
IC = 1.4 A
MINIMUM TYPICAL MAXIMUM
110
110
55
4.0
5
5
18 43.5
UNITS
V
V
V
V
mA
mA
---
Cob VCB = 50 V
f = 1.0 MHz
220 pF
GP
IMD3
ηC
VCE = 50 V ICQ = 100 mA
POUT = 150 W (PEP)
14
37
dB
-30 dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ASI10612.PDF ] | |
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