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Número de pieza | ARF1502 | |
Descripción | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
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ARF1502
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
ARF1500
BeO
135-05
SGS
D
G
S
65V 1500W 40MHz
The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial,
medical and industrial RF power generator and amplifier applications up to 40 MHz.
Specified 65 Volt, 27.12 MHz Characteristics:
Output Power = 900 Watts.
Gain = 17dB (Class C)
Efficiency > 75%
High Performance Power RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
VDSS
VDGO
ID
VGS
PD
TJ,TSTG
TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF 1500
UNIT
200
Volts
200
70 Amps
±30 Volts
1500
Watts
-55 to 200
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
VDS(ON)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
On State Drain Voltage 1 (ID(ON) = 35A, VGS = 10V)
200
Volts
4.0
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
100
1000
µA
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±400 nA
gfs Forward Transconductance (VDS = 25V, ID = 35A)
8 11
mhos
Visolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
2500
Volts
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
35
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted)
RθJC
RθCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
0.09
MAX
0.12
UNIT
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA:
405 S.W. Columbia Street
Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE: Chemin de Magret
F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet ARF1502.PDF ] |
Número de pieza | Descripción | Fabricantes |
ARF1500 | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE | Advanced Power Technology |
ARF1501 | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE | Advanced Power Technology |
ARF1502 | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE | Advanced Power Technology |
ARF1505 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Technology |
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