PDF A290011T-90 Data sheet ( Hoja de datos )

Número de pieza A290011T-90
Descripción 128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
Fabricantes AMIC Technology 
Logotipo AMIC Technology Logotipo

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A29001/290011 Series
128K X 8 Bit CMOS 5.0 Volt-only,
Boot Sector Flash Memory
n 5.0V ± 10% for read and write operations
n Access times:
- 55/70/90 (max.)
n Current:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 1 µA typical CMOS standby
n Flexible sector architecture
- 8 Kbyte/ 4 KbyteX2/ 16 Kbyte/ 32 KbyteX3 sectors
- Any combination of sectors can be erased
- Supports full chip erase
- Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
n Top or bottom boot block configurations available
n Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors
and verify the erased sectors
- Embedded Program algorithm automatically writes and
verifies bytes at specified addresses
n Typical 100,000 program/erase cycles per sector
n 20-year data retention at 125°C
- Reliable operation for the life of the system
n Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
- Superior inadvertent write protection
n Data Polling and toggle bits
- Provides a software method of detecting completion of
program or erase operations
n Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
n Hardware reset pin (RESET )
- Hardware method to reset the device to reading array
data (not available on A290011)
n Package options
- 32-pin P-DIP, PLCC, or TSOP (Forward type)
General Description
The A29001 is a 5.0 volt-only Flash memory organized as
131,072 bytes of 8 bits each. The A29001 offers the RESET
function, but it is not available on A290011. The 128 Kbytes of
data are further divided into seven sectors for flexible sector
erase capability. The 8 bits of data appear on I/O0 - I/O7 while
the addresses are input on A0 to A16. The A29001 is offered in
32-pin PLCC, TSOP, and PDIP packages. This device is
designed to be programmed in-system with the standard
system 5.0 volt VCC supply. Additional 12.0 volt VPP is not
required for in-system write or erase operations. However, the
A29001 can also be programmed in standard EPROM
The A29001 has the first toggle bit, I/O6, which indicates
whether an Embedded Program or Erase is in progress, or it is
in the Erase Suspend. Besides the I/O6 toggle bit, the A29001
has a second toggle bit, I/O2, to indicate whether the
addressed sector is being selected for erase. The A29001 also
offers the ability to program in the Erase Suspend mode. The
standard A29001 offers access times of 55, 70 and 90 ns
allowing high-speed microprocessors to operate without wait
states. To eliminate bus contention the device has separate
chip enable ( CE ), write enable ( WE ) and output enable ( OE )
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated
voltages are provided for the program and erase operations.
The A29001 is entirely software command set compatible with
the JEDEC single-power-supply Flash standard. Commands
are written to the command register using standard
microprocessor write timings. Register contents serve as input
to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed) before
executing the erase operation. During erase, the device
automatically times the erase pulse widths and verifies proper
erase margin.
PRELIMINARY (August, 2001, Version 0.3)
AMIC Technology, Inc.

1 page

A290011T-90 pdf
A29001/A290011 Series
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
the CE and OE pins to VIL. CE is the power control and
selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH all
the time during read operation. The internal state machine
is set for reading array data upon device power-up, or after
a hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, lCC1 in the DC Characteristics table represents
the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE and CE to
VIL, and OE to VIH. An erase operation can erase one
sector, multiple sectors, or the entire device. The Sector
Address Tables indicate the address range that each sector
occupies. A "sector address" consists of the address inputs
required to uniquely select a sector. See the "Command
Definitions" section for details on erasing a sector or the
entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O7 - I/O0. Standard
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
ICC2 in the Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O7 - I/O0. Standard read cycle timings and ICC read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the OE
The device enters the CMOS standby mode when the CE
& RESET pins ( CE only on A290011) are both held at VCC
± 0.5V. (Note that this is a more restricted voltage range
than VIH.) The device enters the TTL standby mode when
CE is held at VIH, while RESET (Not available on
A290011) is held at VCC±0.5V. The device requires the
standard access time (tCE) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
ICC3 in the DC Characteristics tables represents the standby
current specification.
Output Disable Mode
When the OE input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance
RESET : Hardware Reset Pin (N/A on A290011)
The RESET pin provides a hardware method of resetting
the device to reading array data. When the system drives
the RESET pin low for at least a period of tRP, the device
immediately terminates any operation in progress, tristates
all data output pins, and ignores all read/write attempts for
the duration of the RESET pulse. The device also resets
the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once
the device is ready to accept another command sequence,
to ensure data integrity.
The RESET pin may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the
Flash memory.
Refer to the AC Characteristics tables for RESET
parameters and diagram.
PRELIMINARY (August, 2001, Version 0.3)
AMIC Technology, Inc.

5 Page

A290011T-90 arduino
A29001/A290011 Series
Table 5. A29001/A290011 Command Definitions
(Note 1)
Read (Note 5)
Addr Data Addr Data
Reset (Note 6)
1 XXX F0
Manufacturer ID
(Note 7) Device ID Top
Continuation ID
4 555 AA
4 555 AA
4 555 AA
2AA 55
2AA 55
2AA 55
Sector Protect Verify 4 555 AA 2AA 55
(Note 8)
Chip Erase
4 555 AA
6 555 AA
2AA 55
2AA 55
Sector Erase
Erase Suspend (Note 9)
Erase Resume (Note 10)
6 555 AA
1 XXX B0
1 XXX 30
2AA 55
Bus Cycles (Notes 2 - 4)
Addr Data Addr Data Addr Data Addr Data
555 90 X00 37
555 90 X01 A1
555 90 X03 7F
555 90 SA 00
X02 01
555 A0 PA PD
555 80 555 AA 2AA 55 555 10
555 80 555 AA 2AA 55 SA 30
X = Don't care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE or CE pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE or CE pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A16 - A12 select a unique sector.
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operation.
4. Address bits A16 - A12 are don't cares for unlock and command cycles, unless SA or PA required.
5. No unlock or command cycles required when reading array data.
6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high
(while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a read cycle.
8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more
9. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend
10. The Erase Resume command is valid only during the Erase Suspend mode.
11. The time between each command cycle has to be less than 50µs.
PRELIMINARY (August, 2001, Version 0.3)
AMIC Technology, Inc.

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