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PDF AT636 Data sheet ( Hoja de datos )
| Número de pieza | AT636 | |
| Descripción | PHASE CONTROL THYRISTOR | |
| Fabricantes | Power Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AT636 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
feb 97 - ISSUE : 03
AT636
Repetitive voltage up to
Mean on-state current
Surge current
1800 V
1965 A
36 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C] Value Unit
V RRM
Repetitive peak reverse voltage
125 1800
V
V RSM
Non-repetitive peak reverse voltage
125 1900
V
V DRM
Repetitive peak off-state voltage
125 1800
V
I RRM
Repetitive peak reverse current
V=VRRM
125 70
mA
I DRM
Repetitive peak off-state current
V=VDRM
125 70
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
1965
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1695
A
I TSM
Surge on-state current
sine wave, 10 ms
125 36
kA
I² t I² t
without reverse voltage
6480 x1E3 A²s
V T On-state voltage
On-state current = 2900 A
25 1.4
V
V T(TO)
Threshold voltage
125 0.82
V
r T On-state slope resistance
125 0.180
mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 2200 A, gate 10V 5ohm 125 200 A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
125 500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=.5 µs 25
3
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
250 µs
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 1430 A
125 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 300
mA
I L Latching current, typical
VD=5V, tp=30µs
25 700
mA
GATE
V GT
Gate trigger voltage
VD=5V
25 3.5
V
I GT Gate trigger current
VD=5V
25 300
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125 0.25
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
5V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
21 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 125
22.0 / 24.5
520
°C
kN
g
ORDERING INFORMATION : AT636 S 18
standard specification
VDRM&VRRM/100
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AT636.PDF ] | |
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