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Número de pieza | BC857A-Z3E | |
Descripción | SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS | |
Fabricantes | ETC | |
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SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
BC856A3A BC858C3L
BC856BZ3B BC859AZ4A
BC857AZ3E BC859B4B
BC857B3F BC859CZ4C
BC857C3G BC860AZ4E
BC858A3J BC860B4F
BC858B3K BC860C4GZ
COMPLEMENTARY TYPES
BC856
BC846
BC857
BC847
BC858
BC848
BC859
BC849
BC860
BC850
BC856
BC858
BC860
BC857
BC859
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage
Temperature Range
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
IEM
IBM
IEM
Ptot
Tj:Tstg
BC856
-80
-80
-65
BC857 BC858 BC859
-50 -30 -30
-50 -30 -30
-45 -30 -30
-5
-100
-200
-200
-200
330
-55 to +150
BC860
-50
-50
-45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BC856 BC857 BC858 BC859 BC860 UNIT CONDITIONS.
Collector Cut-Off Current ICBO Max -15 nA VCB = -30V
Max
-4 µA VCB = -30V
Tamb=150°C
Collector-Emitter
Saturation Voltage
VCE(sat) Typ
Max.
Typ
Max.
Typ
Max.
-75 -75
-300 -300
-75
-300
-250
-650
-300
-600
-75 -75
-250 -250
mV
mV
mV
IC=-10mA,
IB=-0.5mA
IC=-100mA,
IB=-5mA
IC=-10mA*
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
VBE(sat) Typ
Typ
VBE Min
Typ
Max
-700 mV
-850 mV
-600 -600 -600 -580 -580 mV
-650 -650 -650 -650 -650
-750 -750 -750 -750 -750
IC=-10mA,
IB=-0.5mA
IC=-100mA,
IB=-5mA
IC=-2mA
VCE=-5V
Max
-820 mV IC=-10mA
VCE=-5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC= 11mA, VCE = 1V at constant base current.
1 page |
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