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PDF BFR106 Data sheet ( Hoja de datos )
| Número de pieza | BFR106 | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFR106 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor
• 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA
• For UHF / VHF applications
• Driver for multistage amplifiers
• For linear broadband and antenna amplifiers
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
BFR106
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR106
Marking
Pin Configuration
R7s 1=B 2=E 3=C
Package
SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage,
TA = 25°C
TA = -55°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 76 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
16
15
20
20
3
210
21
700
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
105
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-21
1 page  
Total power dissipation Ptot = ƒ(TS)
750
mW
600
550
500
450
400
350
300
250
200
150
100
50
00
15 30 45 60 75 90 105 120 °C 150
TS
BFR106
5 2013-11-21
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BFR106.PDF ] | |
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