PDF BFP450 Data sheet ( Hoja de datos )

Número de pieza	BFP450
Descripción	Linear Low Noise Silicon Bipolar RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices 1 page BFP450 List of Figures List of Figures Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5-1 BFP450 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA . . . . . . . . . . . . 16 Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18 Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 19 Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 21 Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 50 / 90 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 5-14 Source Impedance for Minimum Noise Figure = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . 22 Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 24 Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . 25 Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 7-3 Marking Description (Marking BFP450: ANs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Datasheet 5 Revision 1.2, 2013-07-29 5 Page 5 Electrical Characteristics BFP450 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Min. 4.5 Values Typ. Max. 5– Unit V Collector emitter leakage current ICES – – 11) μA – 1 301) nA Collector base leakage current Emitter base leakage current ICBO – 1 301) nA IEBO – 0.05 31) μA DC current gain hFE 60 95 130 50 85 120 1) Maximum values not limited by the device but the short cycle time of the 100% test Note / Test Condition IC = 1 mA, IB = 0 Open base VCE = 15 V, VBE = 0 VCE = 3 V, VBE = 0 E-B short circuited VCB = 3 V, IE = 0 Open emitter VEB = 0.5 V, IC = 0 Open collector VCE = 4 V, IC = 50 mA VCE = 3 V, IC = 90 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Min. Transition frequency fT 18 Collector base capacitance CCB – Collector emitter capacitance CCE – Emitter base capacitance CEB – Values Typ. Max. 24 – 0.48 0.8 1.2 – 1.7 – Unit Note / Test Condition GHz pF pF pF VCE = 3 V, IC = 90 mA, f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz Emitter grounded VCE = 3 V, VBE = 0 V f = 1 MHz Base grounded VEB = 0.5 V, VCB = 0 V f = 1 MHz Collector grounded Datasheet 11 Revision 1.2, 2013-07-29 11 Page

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