PDF BFP420F Data sheet ( Hoja de datos )

Número de pieza	BFP420F
Descripción	Low Noise Silicon Bipolar RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices 1 page BFP420F List of Figures List of Figures Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5-1 BFP420F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA . . . . . . . . . . . . 18 Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 19 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 20 Figure 5-7 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 5-8 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 5-9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 21 Figure 5-10 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . . 22 Figure 5-11 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . . . . . . 22 Figure 5-12 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 5-13 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 5-14 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 24 Figure 5-15 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24 Figure 5-16 Input Matching S11 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 5-17 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 4 / 15 mA . . . . . . . . . . . 25 Figure 5-18 Output Matching S22 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 5-19 Noise Figure NFmin = f (f), VCE = 3 V, IC = 4 / 16 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 5-20 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 27 Figure 5-21 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27 Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 7-3 Marking Description (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Data Sheet 5 Revision 1.1, 2012-11-07 5 Page 5 Electrical Characteristics BFP420F Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Min. 4.5 Collector emitter leakage current ICES – – Collector base leakage current Emitter base leakage current DC current gain ICBO IEBO hFE – – 60 Values Typ. Max. 5.5 – – 10 1 30 1 30 10 100 95 130 Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base μA VCE = 15 V, VBE = 0 nA VCE = 3 V, VBE = 0 E-B short circuited nA VCB = 3 V, IE = 0 Open emitter nA VEB = 0.5 V, IC = 0 Open collector VCE = 4 V, IC = 5 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Transition frequency Min. fT 18 Collector base capacitance CCB – Collector emitter capacitance CCE – Emitter base capacitance CEB – Values Typ. Max. 25 – 0.15 0.3 0.46 – 0.55 – Unit Note / Test Condition GHz pF pF pF VCE = 3 V, IC = 30 mA f = 2 GHz VCB = 2 V, VBE = 0 f = 1 MHz Emitter grounded VCE = 2 V, VBE = 0 f = 1 MHz Base grounded VEB = 0.5 V, VCB = 0 f = 1 MHz Collector grounded Data Sheet 11 Revision 1.1, 2012-11-07 11 Page

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