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PDF BPW34 Data sheet ( Hoja de datos )
| Número de pieza | BPW34 | |
| Descripción | Silicon PIN Photodiode | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BPW34 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Silizium-PIN-Fotodiode
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode
NEW: in SMT and as Reverse Gullwing
BPW 34
BPW 34 S
BPW 34 S (E9087)
Cathode marking
4.0
3.7
5.4
4.9 Chip position
4.5
4.3
0.6
0.4
0.5
0.3
0.8
0.6
0.6
0.35 0.4
0.2
0 ... 5˚
5.08 mm
spacing
Photosensitive area
2.65 mm x 2.65 mm
BPW 34
Approx. weight 0.1 g
GEO06643
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm
q Kurze Schaltzeit (typ. 20 ns)
q DIL-Plastikbauform mit hoher
Packungsdichte
q BPW 34 S/(E9087): geeignet für
Vapor-Phase Löten und IR-Reflow
Löten (JEDEC level 4)
Anwendungen
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
q IR-Fernsteuerungen
q Industrieelektronik
q “Messen/Steuern/Regeln”
Features
q Especially suitable for applications from
400 nm to 1100 nm
q Short switching time (typ. 20 ns)
q DIL plastic package with high packing
density
q BPW 34 S/(E9087): suitable for
vapor-phase and IR-reflow soldering
(JEDEC level 4)
Applications
q Photointerrupters
q IR remote controls
q Industrial electronics
q For control and drive circuits
Semiconductor Group
1
1998-08-27
1 page  
BPW 34, BPW 34 S
BPW 34 S (E9087)
Relative spectral sensitivity
Srel = f (λ)
100 OHF00078
S rel %
80
60
40
20
0
400 500 600 700 800 900 nm 1100
λ
Dark current
IR = f (VR), E = 0
4000
Ι R pA
OHF00080
3000
2000
1000
0
0 5 10 15 V 20
VR
Photocurrent IP = f (Ev), VR = 5 V
Open-circuit voltage VO = f (Ev)
10 3
µA
ΙP
OHF01066 10 4
mV
V
10 2 10 3
VO
10 1 10 2
ΙP
10 0 10 1
10 -1 10 0
10 0 10 1 10 2 10 3 lx 10 4
EV
Capacitance
C = f (VR), f = 1 MHz, E = 0
100
OHF00081
C pF
80
70
60
50
40
30
20
10
0
10 -2 10 -1 10 0
10 1 V 10 2
VR
Total power dissipation Ptot = f (TA)
160
Ptot
mW
140
OHF00958
120
100
80
60
40
20
0 0 20 40 60 80 ˚C 100
TA
Dark current
IR = f (TA), VR = 10 V, E = 0
10 3
Ι R nA
OHF00082
10 2
10 1
10 0
10 -1
0
20 40 60 80 ˚C 100
TA
Directional characteristics Srel = f (ϕ)
40
30
20 10
0
ϕ
1.0
50
0.8
60 0.6
OHF01402
70 0.4
80 0.2
0
90
100
1.0 0.8 0.6
0.4
0 20 40 60 80 100 120
Semiconductor Group
5
1998-08-27
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BPW34.PDF ] | |
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