|
|
PDF BS616UV8020BC Data sheet ( Hoja de datos )
| Número de pieza | BS616UV8020BC | |
| Descripción | Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | |
| Fabricantes | Brilliance Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BS616UV8020BC (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
BSI Ultra Low Power/Voltage CMOS SRAM
512K x 16 or 1M x 8 bit switchable
BS616UV8020
FEATURES
• Ultra low operation voltage : 1.8 ~3.6V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 15mA (Max.) operating current
I-grade : 20mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=2V
-10 100ns (Max.) at Vcc=2V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
DESCRIPTION
The BS616UV8020 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits or
1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.4uA and maximum access time of 70/100ns in 2V operation.
Easy memory expansion is provided by an active HIGH chip
enable2(CE2), and active LOW chip enable1(CE1), an active LOW
output enable(OE) and three-state output drivers.
The BS616UV8020 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV8020 is available in 48-pin BGA type.
PRODUCT FAMILY
PRODUCT FAMILY
BS616UV8020BC
BS616UV8020BI
OPERATING
TEMPERATURE
Vcc
RANGE
+0 O C to +70 O C
-40 O C to +85 O C
1.8V ~ 3.6V
1.8V ~ 3.6V
SPEED
(ns)
Vcc=2 V
70 / 100
70 / 100
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=2V Vcc=3V Vcc=2V Vcc=3V
2uA 3uA 15mA 20mA
4uA 6uA 20mA 25mA
PKG TYPE
BGA-48-0810
BGA-48-0810
PIN CONFIGURATIONS
BLOCK DIAGRAM
123456
A LB OE A0 A1 A2 CE2
B D8 UB A3 A4 CE1 D0
C D9 D10 A5 A6 D1 D2
D VSS D11 A17 A7 D3 VCC
E VCC D12 VSS A16 D4 VSS
F D14 D13 A14 A15 D5 D6
G D15 CI.O A12 A13 WE D7
H A18 A8 A9 A10 A11 SAE.
48-Ball CSP top View
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
Input
Buffer
22
Row
2048
Decoder
16(8)
.
.
. 16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
2048 x 4096
4096
Column I/O
Write Driver
Sense Amp
256(512)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
16(18)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV8020
1
Revision 2.4
April 2002
1 page  
BSI
DATA RETENTION CHARACTERISTICS ( TA = 0oC to +70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR Vcc for Data Retention
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V ;
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
ICCDR
tCDR
tR
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
See Retention Waveform
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR Њ 1.5V
CE1 Њ Vcc - 0.2V
BS616UV8020
MIN. TYP. (1) MAX.
1.5 --
--
UNITS
V
-- 0.2
0
TRC (2)
--
--
2
--
--
uA
ns
ns
Vcc
tR
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR Њ 1.5V
CE2 Љ 0.2V
Vcc
tR
VIL
R0201-BS616UV8020
5
Revision 2.4
April 2002
5 Page 
BSI
BS616UV8020
REVISION HISTORY
Revision
2.2
2.3
2.4
Description
2001 Data Sheet release
Date
Note
Apr. 15, 2001
Modify Standby Current (Typ. Jun. 29, 2001
and Max.)
Modify some AC parameters April,12,2002
R0201-BS616UV8020
11
Revision 2.4
April 2002
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BS616UV8020BC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BS616UV8020BC | Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | Brilliance Semiconductor |
| BS616UV8020BI | Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable | Brilliance Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |