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PDF BS616LV2015DC Data sheet ( Hoja de datos )
| Número de pieza | BS616LV2015DC | |
| Descripción | Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
| Fabricantes | Brilliance Semiconductor | |
| Logotipo |  |
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BSI Very Low Power/Voltage CMOS SRAM
128K X 16 bit
BS616LV2015
FEATURES
• Very low operation voltage : 4.5 ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade: 40mA (Max.) operating current
I -grade: 45mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 5.0V
-55 55ns (Max.) at Vcc = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
DESCRIPTION
The BS616LV2015 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.6uA and maximum access time of 70/55ns in 5V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV2015 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2015 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package, JEDEC standard 44-pin TSOP Type II package
and 48-pin BGA package.
PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
BS616LV2015DC
BS616LV2015EC
BS616LV2015TC
BS616LV2015AC
BS616LV2015DI
BS616LV2015EI
BS616LV2015TI
BS616LV2015AI
+0 O C to +70 O C
-40 O C to +85 O C
PIN CONFIGURATIONS
4.5V ~ 5.5V
4.5V ~ 5.5V
SPEED
(ns)
Vcc=5.0V
70 / 55
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=5.0V
Vcc=5.0V
6uA 40mA
70 / 55
10uA
BLOCK DIAGRAM
45mA
PKG TYPE
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
BS616LV2015EC
BS616LV2015EI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
12345
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
6
A LB OE A0 A1 A2 N.C.
B D8 UB A3 A4 CE D0
A8
A13
A15
A16
A14
A12
A7
A6
A5
A4
DQ0
.
.
.
.
DQ15
Address
Input
Buffer
20
Row
1024
Decoder
Data
16
Input
16
. Buffer
.
. 16
.
Data
Output
16
Buffer
Memory Array
1024 x 2048
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
C D9 D10 A5 A6 D1 D2
D
VSS D11 N.C.
A7
D3 VCC
E VCC D12 N.C. A16 D4 VSS
F
D14 D13 A14 A15
D5
D6
G
D15 N.C. A12 A13 WE
D7
CE
WE
OE
UB
LB
Vcc
Gnd
Control
14
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
H
N.C.
A8
A9 A10 A11 N.C.
48-ball BGA top view
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV2015
1
Revision 2.5
April 2002
1 page  
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
ADDRESS
D OUT
READ CYCLE2 (1,3,4)
t OH
t AA
t RC
BS616LV2015
t OH
CE
LB,UB
D OUT
t ACS
t BA
t (5)
CLZ
t BE
t tBDO
(5)
CHZ
READ CYCLE3 (1,4)
ADDRESS
t RC
t AA
OE
t OE
CE
LB,UB
t OLZ
t(5) ACS
t CLZ
t BA
t BE
D OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. Transition is easured± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
R0201-BS616LV2015
5
t OH
t OHZ (5)
t (1,5)
CHZ
t BDO
Revision 2.5
April 2002
5 Page 
BSI
BS616LV2015
REVISION HISTORY
Revision
2.2
2.3
2.4
2.5
Description
2001 Data Sheet release
Date
Note
Apr. 15, 2001
Modify Standby Current (Typ. and Jun. 29, 2001
Max.)
Modify CSP Pin Configuration
Pin number : E3
“ VSS ” rename to “ N.C. “
Modify some AC parameters.
Sep.12, 2001
April,12,2002
R0201-BS616LV2015
11
Revision 2.5
April 2002
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BS616LV2015DC.PDF ] | |
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