|
|
PDF BS616LV1623TC-70 Data sheet ( Hoja de datos )
| Número de pieza | BS616LV1623TC-70 | |
| Descripción | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable | |
| Fabricantes | ETC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BS616LV1623TC-70 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
BSI Very Low Power/Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
BS616LV1623
FEATURES
• Vcc operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 45mA (@55ns) operating current
I -grade: 46mA (@55ns) operating current
C-grade: 36mA (@70ns) operating current
I -grade: 37mA (@70ns) operating current
3.0uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
DESCRIPTION
The BS616LV1623 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,676 words by 16 bits or
2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc
range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 3.0uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC .
This device provide three control inputs and three states output drivers
for easy memory expansion.
The BS616LV1623 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1623 is available in 48-pin 12mmx20mm TSOP1 package.
PRODUCT FAMILY
PRODUCT FAMILY
BS616LV1623TC
OPERATING
TEMPERATURE
+0 O C to +70 O C
Vcc
RANGE
SPEED
(ns)
55ns : 3.0~3.6V
70ns : 2.7~3.6V
2.7V ~ 3.6V 55 / 70
BS616LV1623TI
-40 O C to +85 O C 2.7V ~ 3.6V 55 / 70
POWER DISSIPATION
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=3V
Vcc=3V Vcc=3V
55ns
70ns
PKG TYPE
10 uA
45mA 36mA TSOP1-48(12mmx20mm)
20 uA
46mA 37mA TSOP1-48(12mmx20mm)
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
/CE1
D0
D1
D2
D3
Vcc
CIO
Vss
D4
D5
D6
D7
A19
/WE
A18
A17
A16
A15
A14
1
9
10
13
16
17
24
BS616LV1623TC
BS616LV1623T I
48 A5
47 A6
46 A7
/OE
/UB
/LB
CE2
SAE
D15
D14
D13
37 D12
Vss
Vcc
D11
D10
D9
D8
A8
A9
A10
27 A11
A12
25 A13
48-pin 12mmx20mm TSOP1 top view
BLOCK DIAGRAM
A19
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
Input
Buffer
24
Row
4096
Decoder
16(8)
.
.
. 16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
4096 x 4096
4096
Column I/O
Write Driver
Sense Amp
256(512)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
16(18)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV1623
1
Revision 1.1
Jan. 2004
1 page  
BSI
BS616LV1623
DATA RETENTION CHARACTERISTICS ( TA = -40oC to +85oC )
SYMBOL
PARAMETER
VDR Vcc for Data Retention
(3)
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR Operation Recovery Time
TEST CONDITIONS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or
LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or
LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
See Retention Waveform
MIN. TYP. (1) MAX.
1.5 --
--
-- 1.5
0
TRC (2)
--
--
5
--
--
UNITS
V
uA
ns
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR(Max.) is 2.5uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≧ 1.5V
CE1 ≧ Vcc - 0.2V
Vcc
tR
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR ≧ 1.5V
CE2 ≦ 0.2V
Vcc
tR
VIL
R0201-BS616LV1623
5
Revision 1.1
Jan. 2004
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BS616LV1623TC-70.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BS616LV1623TC-70 | Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable | ETC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |