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Número de pieza | BS270 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BS270 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! BS270
N-Channel Enhancement Mode Field Effect Transistor
April 1995
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
Features
400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS
VDGR
VGSS
Drain-Source Voltage
Drain-Gate Voltage (RGS < 1MΩ)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
Derate Above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
BS270
60
60
±20
±40
400
2000
625
5
-55 to 150
300
200
Units
V
V
V
mA
mW
mW/°C
°C
°C
°C/W
BS270.SAM
1 page Typical Electrical Characteristics (continued)
3
2
1
RDS(ON) Limit
0.5
0.1
0.05
0.01
V GS = 10V
SINGLE PULSE
TA = 25°C
100us
1ms
1 0100mmss
1s
10s
DC
0.005
1
2 5 10 20 30
V DS , DRAIN-SOURCE VOLTAGE (V)
60 80
Figure 13. Maximum Safe Operating
Area.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
t 1, TIME (sec)
1
Figure 14. Transient Thermal Response Curve.
R θJA (t) = r(t) * R θJA
R θJA = (See Datasheet)
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100 300
BS270.SAM
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BS270.PDF ] |
Número de pieza | Descripción | Fabricantes |
BS270 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
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