|
|
PDF BT258S-800R Data sheet ( Hoja de datos )
| Número de pieza | BT258S-800R | |
| Descripción | Thyristors logic level | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BT258S-800R (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Thyristors
logic level
Product specification
BT258S-800R
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
MAX. UNIT
800 V
5A
8A
75 A
PINNING - SOT428
PIN
NUMBER
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
2
13
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb ≤ 111 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-40
-
800
5
8
75
82
28
50
2
5
5
0.5
150
1251
V
A
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002
1
Rev 2.000
1 page  
Philips Semiconductors
Thyristors
logic level
Product specification
BT258S-800R
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
6.73 max
tab
1.1
seating plane
2.38 max
0.93 max
5.4
6.22 max
10.4 max
4 min
4.6
1
2.285 (x2)
MOUNTING INSTRUCTIONS
2
3
0.5 min
0.8 max
(x2)
0.5
0.3
0.5
Fig.13. SOT428 : centre pin connected to tab.
Dimensions in mm
7.0
7.0
2.15 1.5
2.5
Notes
1. Plastic meets UL94 V0 at 1/8".
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
October 2002
5
Rev 2.000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BT258S-800R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BT258S-800LT | SCR logic level | NXP Semiconductors |
| BT258S-800R | Thyristors logic level | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |