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PDF BT168W Data sheet ( Hoja de datos )
| Número de pieza | BT168W | |
| Descripción | Thyristors logic level for RCD/ GFI/ LCCB applications | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BT168W (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Philips Semiconductors
Thyristors
logic level for RCD/ GFI/ LCCB applications
Product specification
BT168W series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope
suitable for surface mounting,
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
(RCD/ GFI/ LCCB)
applications
where a minimum IGT limit is needed.
These devices may be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT168 BW DW EW GW
Repetitive peak
200 400 500 600
off-state voltages
Average on-state
0.6 0.6 0.6 0.6
current
RMS on-state current 1 1 1 1
Non-repetitive peak 8 8 8 8
on-state current
V
A
A
A
PINNING - SOT223
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
4
123
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
B
- 2001
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave;
RMS on-state current
Tsp ≤ 112 ˚C
all conduction angles
Non-repetitive peak
t = 10 ms
on-state current
t = 8.3 ms
half sine wave;
I2t for fusing
Tj = 25 ˚C prior to surge
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 2 A; IG = 10 mA;
dIG/dt = 100 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
DE
4001 5001
0.63
1
8
9
0.32
50
1
5
5
2
0.1
150
125
G
6001
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100
1 page  
Philips Semiconductors
Thyristors
logic level for RCD/ GFI/ LCCB Applications
MOUNTING INSTRUCTIONS
3.8
min
1.5
min
Product specification
BT168W series
Dimensions in mm.
1.5
min
(3x)
1.5
min
2.3
4.6
6.3
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
36
60
4.6
9
10
18
4.5
Dimensions in mm.
7
15
50
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
September 1997
5
Rev 1.100
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BT168W.PDF ] | |
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