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PDF BT150S-600R Data sheet ( Hoja de datos )
| Número de pieza | BT150S-600R | |
| Descripción | SCR | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BT150S-600R
SCR
17 March 2014
Product data sheet
1. General description
Planar passivated SCR with sensitive gate in a SOT428 (DPAK) surface mountable
plastic package. These devices are intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
• Sensitive gate
• Planar passivated for voltage ruggedness and reliability
• Direct triggering from low power drivers and logic ICs
• Surface mountable package
3. Applications
• General purpose switching
• Protection Circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
[1]
VRRM
repetitive peak reverse
voltage
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current half sine wave; Tmb ≤ 111 °C; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 600 V
- - 35 A
- - 4A
- 15 200 µA
[1] Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
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NXP Semiconductors
40
lTSM
(A)
30
BT150S-600R
SCR
aaa-011897
20
IT ITSM
10
0
1
f = 50 Hz
10
tp t
Tj(init) = 25 °C max
102 103
number of cycles
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
103 aaa-011898
IT ITSM
lTSM
(A)
102
(1)
tp t
Tj(init) = 25 °C max
10
10-5
tp ≤ 10 ms
(1) dIT/dt limit
10-4
10-3
tp (s)
10-2
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT150S-600R
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
11. Soldering
Footprint information for reflow soldering of DPAK (SOT428) package
BT150S-600R
SCR
SOT428
1
4.6
5.75 5.65
3.6
2.45
6
1.15
2.4 2.3
7
6.15
5.9
5.8
1.8
4.725
6.5
6
6.125
0.3
1.5 1.3
1.4
1.65
4.57
occupied area
solder resist
solder lands
solder paste
Dimensions in mm
Issue date
14-03-12
14-03-17
Fig. 14. Reflow soldering footprint for DPAK (SOT428)
BT150S-600R
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 March 2014
sot428_fr
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 14
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