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PDF BST62-70 Data sheet ( Hoja de datos )
| Número de pieza | BST62-70 | |
| Descripción | PNP SILICON PLANAR DARLINGTON TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
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SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996
FEATURES
* Fast Switching
* High hFE
7
BST62-70
C
PARTMAKING DETAIL — 627
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pea Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
SOT89
VALUE
-85
-72
-10
-1.5
-500
-100
1
-65 to +150
UNIT
V
V
V
A
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -85
V IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -72
V IC=-10mA, IB=0*
Emitter-Base Breakdown V(BR)EBO -10
Voltage
V IE=-10µA, IC=0
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
IEBO
ICES
-10 µA VEB=-8V, IE=0
-10 µA VCE=-72V, IC=0
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
-1.3 V
-1.3 V
-1.9 V
IC=-500mA, IB=-0.5mA
IC=-500mA, IB=-0.5mA
Tj=150°C
IC=-500mA, IB=-0.5mA
Static Forward Current
Transfer Ratio
hFE
1K
2K
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
Turn On Time
Turn Off Time
ton
400 Typical ns
IC=-500mA
toff
1.5K Typical ns
IBon=IBoff=-0.5mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FZTA63 (SOT223) datasheet.
3 - 82
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