(PDF) BST122 Datasheet - P-channel enhancement mode vertical D-MOS transistor

Número de pieza	BST122
Descripción	P-channel enhancement mode vertical D-MOS transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET BST122 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 1 page Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation BST122 handbook, halfpage VDD = −50 V 0V −10 V 50 Ω ID MBB689 handbook, halfpage INPUT 10 % 90 % OUTPUT 90 % ton 10 % toff MBB690 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. −103 handbook, halfpage ID (mA) −102 MDA779 VGS = −10 V −7.5 V −6 V −5 V −4.5 V −10 6 8 10 12 14 16 18 RDSon (Ω) −0.8 handbook, halfpage ID (A) −0.6 MDA780 −0.4 −0.2 0 0 −2 −4 −6 −8 −10 VGS (V) Fig.4 Drain current vs ON-resistance; Tj = 25 °C; typical values. April 1995 Fig.5 Transfer characteristics; Tj = 25 °C; −VDS = 10 V; typical values. 5 5 Page Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor NOTES Product speciﬁcation BST122 April 1995 11 11 Page

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PDF BST122 Data sheet ( Hoja de datos )