|
|
PDF BSS84W Data sheet ( Hoja de datos )
| Número de pieza | BSS84W | |
| Descripción | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSS84W (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
BSS84W
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
Mechanical Data
· Case: SOT-323, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking Code: K84
· Weight: 0.006 grams (approx.)
A
D
TOP VIEW
BC
GS
ED
G
H
K
J
L
M
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
BSS84W
-50
-50
±20
-130
200
625
-55 to +150
SOT-323
Dim Min Max
A 0.30 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
All Dimensions in mm
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Symbol Min Typ
BVDSS -50
-75
Zero Gate Voltage Drain Current
¾¾
IDSS ¾ ¾
¾¾
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
IGSS
¾
¾
VGS(th)
RDS (ON)
gFS
-0.8
¾
.05
-1.6
6
¾
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
tD(ON)
tD(OFF)
¾
¾
10
18
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30205 Rev. A-2
1 of 1
Max Unit
Test Condition
¾
-15
-60
-100
±10
V VGS = 0V, ID = -250mA
µA VDS = -50V, VGS = 0V, TJ = 25°C
µA VDS = -50V, VGS = 0V, TJ = 125°C
nA VDS = -25V, VGS = 0V, TJ = 25°C
nA VGS = ±20V, VDS = 0V
-2.0 V VDS = VGS, ID = -1mA
10 W VGS = -5V, ID = 0.100A
¾ S VDS = -25V, ID = 0.1A
45 pF
25
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
12 pF
¾ ns VDD = -30V, ID = -0.27A,
¾ ns RGEN = 50W, VGS = -10V
BSS84W
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSS84W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSS84 | P-Channel MOSFET |  JCET |
| BSS84 | P-channel enhancement mode vertical D-MOS transistor |  NXP Semiconductors |
| BSS84 | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |  Zetex Semiconductors |
| BSS84 | SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |  Siemens Semiconductor Group |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |