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PDF BSS229 Data sheet ( Hoja de datos )
| Número de pieza | BSS229 | |
| Descripción | SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS229 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SIPMOS® Small-Signal Transistor
q VDS 250 V
q ID
0.07 A
q RDS(on) 100 Ω
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in VGS(th)
BSS 229
1 23
Type
Ordering
Code
Tape and Reel
Information
BSS 229 Q62702-S600 E6296: 1500 pcs/reel;
2 reels/carton; source first
Pin Configuration Marking Package
123
GDS
SS229 TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 25 ˚C
Pulsed drain current,
TA = 25 ˚C
Max. power dissipation, TA = 25 ˚C
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
Vgs
ID
ID puls
Ptot
Tj, Tstg
Values
250
250
± 14
± 20
0.07
0.21
0.63
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
–
–
≤ 200
E
55/150/56
K/W
–
Semiconductor Group
1
04.97
1 page  
BSS 229
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ≥ 2 × ID × R ,DS(on)max. tp = 80 µs
Drain-source on-resistance
RDS(on) = f (Tj)
parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BSS229.PDF ] | |
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