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PDF BSS209PW Data sheet ( Hoja de datos )
| Número de pieza | BSS209PW | |
| Descripción | OptiMOS -P Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary data
BSS 209PW
OptiMOS-P Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Type
BSS 209PW
Package
SOT-323
Ordering Code
Q67042-S4074
Product Summary
VDS
RDS(on)
ID
-20
550
-0.58
V
mΩ
A
SOT-323
3
Marking
X3s
Gate
pin1
2
1
VSO05561
Drain
pin 3
Source
pin 2
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-0.58 A , VDD=-10V, RGS=25Ω
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=-0.58A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-0.58
-0.46
-2.3
3.5
-6
±12
0.52
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-12-05
1 page  
Preliminary data
BSS 209PW
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
4
Vgs = -3.5V
Vgs = -3V
A Vgs = -4V
Vgs = -2.8V
Vgs = -2.5V
2
Vgs = -4.5V
Vgs = -7V
Vgs = -2.2V
1 Vgs = -2V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
1
Vgs = -2.2V
Vgs = -2.5V
Ω
0.8 Vgs = - 3V
Vgs= - 3.5V
Vgs = - 4V
0.7 Vgs = - 4.5V
Vgs= - 5V
0.6 Vgs= - 6V
Vgs = - 7V
0.5
0.4
Vgs = -1.8V
0.3
0
0 1 2 3 4 5 6 7 8 V 10
- VDS
0.2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 A 2
- ID
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
6
A
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 V 3.5
- VGS
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
4
S
3
2.5
2
1.5
1
0.5
0
0 1 2 3 4A 6
- ID
Page 5
2001-12-05
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSS209PW.PDF ] | |
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