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PDF BSS192P Data sheet ( Hoja de datos )
| Número de pieza | BSS192P | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS192P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Preliminary data
SIPMOS Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Gate
pin1
BSS 192 P
Product Summary
VDS
RDS(on)
ID
-250
12
-0.19
V
Ω
A
Drain
pin 2
SOT89
1
2
3
Source
pin 3
2
VPS05162
Type
Package
BSS 192 P SOT89
Ordering Code Tape and Reel Information Marking
Q67042-S4168 -
KC
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=-0.19A, VDS=-200V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-0.19
-0.1
-0.76
6
±20
1
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-07-25
1 page  
Preliminary data
BSS 192 P
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj =25°C, -VGS
0.7
10V
A 6V
4.6V
4V
3.6V
0.5 3.4V
3.2V
2.8V
0.4 2.6V
2.4V
0.3
0.2
0.1
0
0 1 2 3 4 5 6 7 8 V 10
-VDS
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0.7
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS; Tj =25°C, -VGS
15
Ω
2.4V 2.6V 2.8V
3.2V
12
10.5
9
7.5
10V
6 6V
4.6V
4V
4.5 3.6V
3.4V
3
1.5
0
0 0.1 0.2 0.3 0.4 0.5 A 0.7
-ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj =25°C
0.8
S
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1 0.1
0
0 0.5 1 1.5 2 2.5 V 3.5
-VGS
Page 5
0
0 0.1 0.2 0.3 0.4 0.5 A 0.7
-ID
2002-07-25
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSS192P.PDF ] | |
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