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PDF BSS138-7 Data sheet ( Hoja de datos )
| Número de pieza | BSS138-7 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
A
D
BC
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case Material - UL Flammability Classification
Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 2): K38
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
G TOP VIEW S
ED
G
H
K
J
Drain
L
Gate
Source
Maximum Ratings @ TA = 25°C unless otherwise specified
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
a 0° 8°
All Dimensions in mm
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Continuous
Drain Current
Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
BSS138
50
50
±20
200
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
50
¾
¾
75 ¾
V VGS = 0V, ID = 250mA
¾ 0.5 µA VDS = 50V, VGS = 0V
¾ ±100 nA VGS = ±20V, VDS = 0V
VGS(th) 0.5 1.2 1.5
V VDS = VGS, ID =-250mA
RDS (ON) ¾
1.4 3.5
W VGS = 10V, ID = 0.22A
gFS 100 ¾
¾ mS VDS =25V, ID = 0.2A, f = 1.0KHz
Ciss ¾ ¾ 50 pF
Coss
¾
¾
25
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Crss ¾ ¾ 8.0 pF
tD(ON)
¾
¾
20
ns VDD = 30V, ID = 0.2A,
tD(OFF)
¾
¾
20
ns RGEN = 50W
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to miminize self-heating effect.
DS30144 Rev. 6 - 2
1 of 5
BSS138
www.diodes.com
1 page  
1
0.1
0.01
150° C
25° C
-55° C
0.001
0
0.2 0.4 0.6 0.8
1 1.2
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
10
VGS = 0V
f = 1MHz
CiSS
COSS
1
0
CrSS
5 10 15 20 25
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
30
DS30144 Rev. 6 - 2
5 of 5
www.diodes.com
BSS138
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BSS138-7.PDF ] | |
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