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PDF BSS100 Data sheet ( Hoja de datos )
| Número de pieza | BSS100 | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 1996
BSS100 / BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance. This product is particularly suited to low
voltage, low current applications, such as small servo
motor controls, power MOSFET gate drivers, and other
switching applications.
Features
BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V.
BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V
High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
_______________________________________________________________________________
D
BSS100
BSS123
G
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
BSS100
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 20KΩ)
VGSS Gate-Source Voltage - Continuous
- Non Repetitive (TP < 50 µS)
ID Drain Current - Continuous
- Pulsed
0.22
0.9
PD
TJ,TSTG
TL
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
0.63
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient
200
© 1997 Fairchild Semiconductor Corporation
100
100
± 14
± 20
-55 to 150
300
BSS123
0.17
0.68
0.36
Units
V
V
V
A
W
°C
°C
350 °C/W
BSS100 Rev. F1 / BSS123 Rev. F1
1 page  
2
1
0.5 RDS(ON) Limit
0.2
0.1
0.05
0.01
VGS = 20V
SINGLE PULSE
TA = 25°C
100us
1ms
10m s
100m s
D1C01ss
0.005
1
5 10 20
50
VDS , DRAIN-SOURCE VOLTAGE (V)
100 150
Figure 12. BSS100 Maximum Safe
Operating Area.
2
1
0.5 RDS(ON) Lim it
0.2
0.1
0.05
0.01
VGS = 20V
SINGLE PULSE
TA = 25°C
100us
1ms
10m s
100m s
1s
D1C0 s
0.005
1
5 10 20
50
VDS , DRAIN-SOURCE VOLTAGE (V)
100 150
Figure 13. BSS123 Maximum Safe
Operating Area.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0 .2
0.1
0.05
0 .0 2
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
t 1, TIME (sec)
1
Figure 14. BSS100 Transient Thermal Response Curve.
R
θJA (t)
RθJA
= r(t) *
= 200o
R θJA
C/ W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100 300
1
0.5
0.2
0.1
0.05
0.01
D = 0.5
0 .2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
R θJA (t) = r(t)
*
o
R θJA
R θJA = 347 C/ W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100 300
Figure 15. BSS123 Transient Thermal Response Curve.
BSS100 Rev. F1 / BSS123 Rev. F1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSS100.PDF ] | |
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