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PDF BSR50 Data sheet ( Hoja de datos )
| Número de pieza | BSR50 | |
| Descripción | NPN Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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BSR50
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 0.5A.
• Sourced from Process 06.
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature
Ratings
45
60
5
1.5
-55 ~ 150
Units
V
V
V
A
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 10mA, IB = 0
IC = 100µA, IB = 0
IE = 100µA, IC = 0
VCB = 45V, IE = 0
VEB = 4.0V, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 0.5A
IC = 500mA, IB = 500µA
IC = 1.0A, IB = 4.0mA
IC = 500mA, IB = 500µA
IC = 1.0mA, IB = 4.0mA
Min.
45
60
5
Typ.
1,000
2,000
Max.
50
50
Units
V
V
V
nA
nA
1.3 V
1.6
0.9 V
2.2
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
°PD Total Device Dissipation
Derate above 25 C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, May 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BSR50.PDF ] | |
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