(PDF) BSP304A Datasheet - P-channel enhancement mode vertical D-MOS transistors

Número de pieza	BSP304A
Descripción	P-channel enhancement mode vertical D-MOS transistors
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors 1 page Philips Semiconductors P-channel enhancement mode vertical D-MOS transistors Product speciﬁcation BSP304; BSP304A 100 handbook, halfpage C (pF) 80 60 MLC688 C iss 40 20 Coss Crss 0 0 10 20 V DS (V) 30 VGS = 0. Tj = 25 °C. f = 1 MHz. Fig.6 Capacitance as a function of drain source voltage; typical values. handbook8,0h0alfpage ID (mA) 600 P=1W 400 MLD139 VGS = 10 V 7V 6V 5V 4V 200 3.5 V 3V 0 0 2 4 6 8 10 12 V DS (V) Tj = 25 °C. Fig.7 Typical output characteristics. handbook8,0h0alfpage ID (mA) 600 MLC689 400 200 0 0 2 4 6 8 10 V GS (V) VDS = −25 V. Tj = 25 °C. Fig.8 Typical transfer characteristics. 1995 Apr 07 80 handbook, halfpage R DSon (Ω) 60 MLC691 40 20 0 0 2 4 6 8 10 VGS (V) ID = −170 mA. Tj = 25 °C. Fig.9 Drain-source on-state resistance as a function of gate-source voltage; typical values. 5 5 Page

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PDF BSP304A Data sheet ( Hoja de datos )