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PDF BSP129 Data sheet ( Hoja de datos )
| Número de pieza | BSP129 | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP129 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
Product Summary
V DS
R DS(on),max
I DSS,min
BSP129
240 V
6
0.05
Ω
A
SOT-223
Type
BSP129
Package
SOT-223
Ordering Code
Q67000-S073
Tape and Reel Information
E6327: 1000 pcs/reel
Marking
BSP129
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
ID
I D,pulse
dv /dt
V GS
T A=25 °C
T A=70 °C
T A=25 °C
I D=0.36 A,
V DS=192 V,
di /dt =200 A/µs,
T j,max=150 °C
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.35
0.28
1.4
6
±20
Class 1
1.8
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.0
page 1
2003-03-28
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
0.7
10 V
0.6
0.5
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
-0.2 V 0 V 0.2 V
-0.1 V 0.1 V
BSP129
0.5 V
15
1V
0.4
10
0.3 0.5 V
0.2
0.1
0
0246
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
0.1 V
-0.1 V
0.2 V
0V
-0.2 V
5
1V
10 V
8 10
0
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
1 0.6
0.8 0.5
0.4
0.6
0.3
0.4
0.2
0.2
0.1
0
-2 -1 0 1 2 3
V GS [V]
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
I D [A]
Rev. 1.0
page 5
2003-03-28
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP129.PDF ] | |
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