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PDF BSP123 Data sheet ( Hoja de datos )
| Número de pieza | BSP123 | |
| Descripción | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BSP 123
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSP 123
Type
BSP 123
VDS
100 V
ID
0.38 A
Ordering Code
Q67000-S306
Pin 1 Pin 2 Pin 3 Pin 4
GD S D
RDS(on)
6Ω
Package
SOT-223
Tape and Reel Information
E6327
Marking
BSP 123
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 29 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
100
100
± 14
± 20
0.38
0.68
1.7
Unit
V
A
W
Semiconductor Group
1
Sep-12-1996
1 page  
BSP 123
Power dissipation
Ptot = ƒ(TA)
2.0
W
Ptot 1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
0.40
A
ID 0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
20 40 60 80 100 120 °C 160
TA
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
ZthJC
10 1
10 0
Semiconductor Group
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5 Sep-12-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP123.PDF ] | |
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