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PDF BSP125 Data sheet ( Hoja de datos )
| Número de pieza | BSP125 | |
| Descripción | SIPMOS Power-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP125 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Rev. 1.0
BSP125
Product Summary
VDS 600 V
RDS(on) 45 Ω
ID 0.12 A
SOT-223
Type
BSP125
Package
SOT-223
Ordering Code Tape and Reel Information Marking
Q62702-S654 E6327: 3000 pcs/reel
BSP125
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.12A, VDS=480V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
TA=25°C, TA=25
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
0.12
0.1
0.48
6
±20
Class 1
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-02-26
1 page  
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.3
10V
6.0V
A 5.0V
4.0V
3.8V
3.6V
3.2V
0.2 3.0V
2.8V
2.6V
0.15
0.1
0.05
Rev. 1.0
BSP125
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
100
Ω
60
2.6V
2.8V
3.0V
3.2V
3.6V
4.0V
5.0V
6.0V
10V
40
20
0
0 1 2 3 4 5 6 7 8 V 10
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.5
A
0
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 A 0.5
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.4
S
0.3
0.3 0.25
0.2
0.2
0.15
0.1
0.1
0.05
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VGS
0
0 0.1 0.2 0.3 A 0.5
ID
Page 5
2003-02-26
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP125.PDF ] | |
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