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PDF BSP123 Data sheet ( Hoja de datos )
| Número de pieza | BSP123 | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP123 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Rev. 1.0
SIPMOS® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
BSP123
Product Summary
VDS 100 V
RDS(on) 6 Ω
ID 0.37 A
SOT223
Type
BSP123
Package
SOT223
Ordering Code Tape and Reel Information Marking
Q67000-S306 E6327: 1000 pcs/reel
BSP123
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.37A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
0.37
0.3
1.48
6
±20
Class 1
1.79
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-02-26
1 page  
Rev. 1.0
BSP123
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.7
A 10V
5V
0.6
4.5V
4.1V
0.55 3.9V
3.7V
0.5 3.5V
0.45 3.1V
2.9V
0.4 2.3V
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.7
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
20
Ω
16
14
12
10
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 A 0.7
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.4
S
0.3
0.5
0.25
0.4
0.2
0.3
0.15
0.2
0.1
0.1 0.05
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VGS
Page 5
0
0 0.1 0.2 0.3 0.4 0.5 A 0.7
ID
2003-02-26
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP123.PDF ] | |
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