PDF BSP090 Data sheet ( Hoja de datos )

Número de pieza	BSP090
Descripción	P-channel enhancement mode vertical D-MOS transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET BSP090 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 1997 Mar 13 1 page Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation BSP090 CHARACTERISTICS Tj = 25 °C; unless otherwise speciﬁed. SYMBOL PARAMETER V(BR)DSS VGSth IDSS IGSS RDSon drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance Ciss Coss Crss Qg Qgs Qgd td(on) tr ton td(off) tf toff input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-on switching time turn-off delay time fall time turn-off switching time Source-drain diode VSD source-drain diode forward voltage trr reverse recovery time CONDITIONS VGS = 0; ID = −10 µA VGS = VDS; ID = −1 mA VGS = 0; VDS = −24 V VGS = ±20 V; VDS = 0 VGS = −4.5 V; ID = −1.4 A VGS = −10 V; ID = −2.8 A VGS = 0; VDS = −24 V; f = 1 MHz VGS = 0; VDS = −24 V; f = 1 MHz VGS = 0; VDS = −24 V; f = 1 MHz VGS = −10 V; VDD = −15 V; ID = −2.8 A; Tamb = 25 °C VGS = −10 V; VDD = −15 V; ID = −2.8 A; Tamb = 25 °C VGS = −10 V; VDD = −15 V; ID = −2.8 A; Tamb = 25 °C VGS = 0 to −10 V; VDD = −15 V; ID = −1 A; RL = 15 Ω; Rgen = 6 Ω VGS = 0 to −10 V; VDD = −15 V; ID = −1 A; RL = 15 Ω; Rgen = 6 Ω VGS = 0 to −10 V; VDD = −15 V; ID = −1 A; RL = 15 Ω; Rgen = 6 Ω VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; RL = 15 Ω; Rgen = 6 Ω VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; RL = 15 Ω; Rgen = 6 Ω VGS = −10 to 0 V; VDD = −15 V; ID = −1 A; RL = 15 Ω; Rgen = 6 Ω VGD = 0; IS = −1.25 A IS = −1.25 A; di/dt = 100 A/µs MIN. −30 −1 − − − − − − − − TYP. MAX. −− − −2.8 − −500 − ±100 − 0.15 − 0.09 800 − 400 − 100 − 21 − UNIT V V nA nA Ω Ω pF pF pF nC − 2.5 − nC − 6 − nC − 6 − ns − 6 − ns − 12 25 ns − 55 − ns − 40 − ns − 95 190 ns − − −1.3 V − 70 − ns 1997 Mar 13 5 5 Page Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor NOTES Product speciﬁcation BSP090 1997 Mar 13 11 11 Page

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